产品概览
The Vishay SI2302DS-T1-GE3 is a 20V N-channel TrenchFET MOSFET in SOT-23 package. With 65mOhm max RDS(ON) at -4.5V and -2.2A drain current, it is one of the most popular SOT-23 N-channel MOSFETs for low-voltage load switching, DC-DC converter, and battery-powered applications.
主要规格
| 类型 | N-Channel TrenchFET |
| VDS | 20V |
| ID (Max) | 2.2A |
| RDS(ON) | 65mOhm @ VGS=4.5V |
| RDS(ON) | 90mOhm @ VGS=2.5V |
| Qg (Total) | 6nC @ 4.5V |
| Threshold Voltage | 0.65V (typical) |
| 功率耗散 | 1.0W |
| 包装 | SOT-23-3 (TO-236AB) |
| 工作温度 | -55°C 至 +150°C |
特点
- 20V low-voltage MOSFET
- 65mOhm low RDS(ON) at 4.5V
- 2.2A drain current in SOT-23
- TrenchFET technology
- Logic-level gate drive
- Halogen-free option
应用
- Li-ion battery load switch
- DC-DC converter low-side switch
- Motor drive in toys and drones
- LED driver switching
- General-purpose low-voltage switching