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MMUN2211LT1G


NPN 数字晶体管,R1=10kΩ R2=10kΩ,50V,100mA,SOT-23-3,预偏压 BRT 开关

8500

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制造商零件:

MMUN2211LT1G

包装:

SOT-23-3 (TO-236, SC-59)

品牌:
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说明

产品概览

MMUN2211LT1G 是 onsemi 推出的 NPN 偏置电阻晶体管(BRT/数字晶体管),将单个 NPN 晶体管与单片偏置电阻网络(R1 = 10kΩ,R2 = 10kΩ)集成在一个紧凑的 SOT-23-3 封装中。这种预偏置晶体管省去了外部偏置电阻器,减少了元件数量和电路板空间,从而简化了电路设计。它专为通用开关和数字接口应用而设计。.

主要规格

制造商 onsemi
类型 NPN 数字晶体管(BRT)
偏置电阻器 R1 10kΩ(串联基极电阻)
偏置电阻器 R2 10kΩ(基极-发射极并联电阻器)
电阻比 R1/R2 1
VCEO(集电极-发射极电压) 50V
IC(集电极电流) 100mA
hFE(直流电流增益) 35 分钟(IC = 5mA 时)
VCE(饱和)(集电极-发射极饱和度) 最大 0.3V @ IC = 10mA
功率耗散 246mW
工作温度 -55°C 至 +150°C
包装 SOT-23-3 (TO-236)
预算价格 $0.03 @ 3ku

特点

  • 集成偏置电阻器:R1 = 10kΩ,R2 = 10kΩ
  • 无需外部电阻元件,减少了 BOM 和电路板空间
  • 50V 集电极-发射极额定电压
  • 100mA 集电极电流能力
  • 通过集成基极电阻器兼容逻辑级驱动
  • SOT-23-3 表面贴装封装
  • 低 VCE(饱和):10mA 时最大 0.3V
  • 宽工作温度:-55°C 至 +150°C
  • 等同于 DTC114EE / MUN2211

应用

  • GPIO 信号电平转换和接口
  • 继电器和 LED 驱动器电路
  • 数字逻辑信号缓冲
  • 微控制器输出扩展
  • 通用开关和驱动器应用

MMUN2211LT1G 是 Onsemi 数字晶体管系列中的 NPN 偏置电阻晶体管 (BRT),集成了一个 NPN 开关晶体管和一个由 R1 = 10kΩ(串联基极电阻)和 R2 = 10kΩ(基极-发射极分流电阻)组成的单片偏置电阻网络。这种预偏置配置无需外部偏置电阻器,从而将元件数量从三个(晶体管 + 两个电阻器)减少到一个,简化了 PCB 布局并节省了电路板空间。10kΩ/10kΩ 电阻值(R1/R2 比率 = 1)经过优化,可直接驱动 5V 逻辑输出,提供适当的基极驱动电流,而分流电阻则可确保快速关断。该器件的额定电压为 50V VCEO,集电极电流为 100mA,功耗为 246mW,适用于通用开关、信号接口和驱动器应用。.

偏置电阻器网络

MMUN2211LT1G 的 NPN 晶体管集成了两个电阻器。R1 (10kΩ)串联在外部基极输入引脚和晶体管内部基极之间,限制基极驱动电流。R2 (10kΩ) 连接在内部基极和发射极之间,为关断时存储的基极电荷提供放电路径,并确保晶体管在输入浮动或低电平驱动时保持关断。.

开关操作

当输入引脚施加逻辑高电平电压(如 5V)时,电流通过 R1 流入晶体管基极,使其导通并使集电极-发射极结达到饱和。基极电流约为(VIN - VBE)/R1。当输入变为低电平时,R2 为基极存储的电荷提供放电路径,确保快速关断。R1/R2 的比率为 1,可为 5V 逻辑驱动提供平衡的开关性能。.

输入电压注意事项

当 R1 = 10kΩ 时,5V 输入可产生约 430µA 的基极电流(假设 VBE = 0.7V),足以在集电极电流高达 15-20mA 时驱动晶体管进入饱和状态(hFE min = 35)。对于 3.3V 逻辑,基极电流可降至约 260µA,从而支持更低的集电极电流。设计人员必须验证其特定工作条件下的饱和度。.

针脚 名称 类型 功能
1 B(底座) 输入 基极输入(连接至内部 R1,由逻辑信号驱动)
2 E(发射器) 地面 发射器端子(接地)
3 C(收集器) 输出 集电极(连接负载)
  • GPIO 信号电平转换和数字接口集成偏置电阻器,无需外部元件
  • 继电器和 LED 驱动器电路,其中预偏压晶体管直接连接到微控制器输出端
  • 控制系统中的数字逻辑信号缓冲和反转,元件数量最少
  • 微控制器输出扩展,利用有限的 I/O 引脚驱动多个负载
  • 通用低压侧开关,单元件 BRT 取代晶体管 + 两个电阻器
制造商 部件编号 包装 说明
罗姆 DTC114EE SOT-23-3 引脚兼容,R1=10kΩ R2=10kΩ,等效
onsemi MMUN2212LT1G SOT-23-3 R1=22kΩ R2=22kΩ,同系列,电阻更大
onsemi MMUN2213LT1G SOT-23-3 R1=47kΩ R2=47kΩ,降低基极驱动电流
onsemi MMUN2214LT1G SOT-23-3 R1=10kΩ R2=47kΩ,关断速度更快,关态漏电更低
恩智浦 PDTA114ET SOT-23-3 PNP 等效,R1=10kΩ R2=10kΩ,互补对
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