MMBTA05LT1G

The MMBTA05LT1G is a general-purpose NPN bipolar junction transistor from onsemi, optimized for low-power amplification and switching applications. It features a 60V collector-emitter breakdown voltage, 500mA continuous collector current, and a minimum DC current gain of 100 at 100mA. The low saturation voltage of 250mV ensures efficient switching operation. Packaged in a compact SOT-23-3 footprint, it is ideal for space-constrained PCB designs in consumer and industrial electronics.

As an NPN bipolar junction transistor, the MMBTA05LT1G operates by modulating current flow between collector and emitter through a small base current. In the active region, collector current is proportional to base current multiplied by hFE (min 100). In saturation, both junctions are forward-biased, and VCE drops to below 250mV. The 100MHz transition frequency indicates the device’s high-frequency capability, making it suitable for small-signal RF amplification and fast switching up to tens of MHz.

• General-purpose small-signal amplification
• Low-power relay and LED driver
• Sensor interface signal conditioning
• Logic-level transistor-transistor interfacing
• Audio preamplifier stages