The MMBT3904LT3G is a general purpose NPN silicon bipolar junction transistor designed for use in linear and switching applications. Housed in the SOT-23 (TO-236) surface-mount package, it features a collector-emitter voltage of 40 V, collector current of 200 mA, DC current gain of 100 to 300, and a transition frequency of 300 MHz. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant. Supplied on a 10,000-piece tape and reel.
The MMBT3904LT3G is a general purpose NPN silicon bipolar junction transistor from onsemi in SOT-23 package, featuring 40V VCEO, 200mA IC, 300MHz fT, hFE 100-300, and 300mW power dissipation. Pb-free, halogen-free, RoHS compliant. Designed for linear and switching applications.
The MMBT3904LT3G operates as an NPN bipolar junction transistor consisting of a thin P-type base region sandwiched between two N-type semiconductor layers (emitter and collector). When a small forward bias current is applied to the base-emitter junction, it modulates the flow of majority carriers (electrons) from emitter through the base to the collector, producing a much larger collector current. The ratio of collector current to base current defines the DC current gain (hFE), which ranges from 100 to 300 at IC=10mA. The transition frequency of 300 MHz indicates the frequency at which the common-emitter current gain drops to unity. The low collector-emitter saturation voltage (0.2V at 10mA, 0.3V at 50mA) enables efficient switching operation with minimal power loss. Fast switching characteristics (turn-on 35ns, turn-off 50ns) make it suitable for high-speed digital and pulse applications.
| 针脚编号 | 引脚名称 | 说明 |
|---|---|---|
| 1 | 基地 | Control terminal; a small input current modulates the collector-emitter conduction |
| 2 | 发射器 | Current source terminal; electrons are emitted from this region into the base |
| 3 | 收藏家 | Current sink terminal; collects electrons that pass through the base region from the emitter |
| 应用 | 说明 |
|---|---|
| Switching Circuits | Digital logic switching, relay drivers and power control with fast turn-on/turn-off times (35ns/50ns) |
| LED Drivers | Low-power LED switching and current control in indicator and display circuits |
| Signal Amplification | Small-signal audio and RF amplification leveraging high hFE (100-300) and 300MHz bandwidth |
| 逻辑电平转换 | Interface between different voltage domains in mixed-signal systems |
| Pulse Generators | Timing and pulse-shaping circuits using fast switching characteristics |
| Current Sources | Precision current mirror and constant current circuits using matched hFE characteristics |
| Load Drivers | Driving small relays, solenoids and buzzers up to 200mA collector current |
| Sensor Interface | Signal conditioning and amplification for temperature, light and other sensor outputs |
| 模型 | 制造商 | 包装 | 主要区别 |
|---|---|---|---|
| MMBT3904LT1G | onsemi | SOT-23-3 | Same die, 3,000-piece reel (vs. 10,000-piece for LT3G) |
| SMMBT3904LT1G | onsemi | SOT-23-3 | AEC-Q101 qualified automotive version, 3,000-piece reel |
| MMBT3904-7-F | Diodes Inc. | SOT-23-3 | Functionally equivalent, different manufacturer |
| PMBT3904,215 | Nexperia | SOT-23 (TO-236AB) | Pin-compatible, Nexperia-branded equivalent |
| BC847C | Nexperia | SOT-23-3 | Higher VCEO (45V), lower IC (100mA), higher hFE selection available |
品牌:
封装:
货运周期：3~7 天
最低订购量为 1
品牌:
封装:
货运周期：3~7 天
最低订购量为 1
品牌:
封装:
货运周期：3~7 天
最低订购量为 1
货运周期：3~7 天
最低订购量为 1
品牌:
封装:
货运周期：3~7 天
最低订购量为 1
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