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MMBT2907A-7-F


PNP BJT、60V、600mA、100 分钟 hFE、200MHz fT、SOT-23-3、AEC-Q101、低 VCE(饱和)、绿色器件

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制造商零件:

MMBT2907A-7-F

包装:

SOT-23-3(TO-236-3,SC-59),2.9 x 1.3 x 1.0 毫米

品牌:
产品类别:
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说明

产品概览

MMBT2907A-7-F 是 Diodes Incorporated 生产的 PNP 小信号双极结型晶体管 (BJT),专为低功率放大和开关应用而设计。该器件采用外延平面芯片结构,采用紧凑型 SOT-23-3 表面贴装封装,集电极-发射极额定电压为 -60 V,连续集电极电流为 -600 mA,150 mA 时的最小直流电流增益 (hFE) 为 100。该器件的转换频率为 200 MHz,饱和电压低(IC = -150 mA 时的 VCE(sat) = -0.4 V typ),非常适合通用放大器和驱动器电路。该器件符合 AEC-Q101 标准,无铅、无卤素、无锑,因此适用于汽车和环境敏感型应用。互补 NPN 型为 MMBT2222A。.

主要规格

晶体管类型 PNP 双极结型晶体管 (BJT)
集电极-基极电压 (VCBO) -60 V
集电极-发射极电压 (VCEO) -60 V
发射极-基极电压 (VEBO) -6.0 V
集电极连续电流 (IC) -600毫安
集电极峰值电流 (ICM) -800毫安
峰值基极电流 (IBM) -200 毫安
功率耗散 (PD) 310 毫瓦(最小焊盘),350 毫瓦(15 毫米焊盘)
直流电流增益(hFE,最小值) 100 @ IC = -150 mA,VCE = -10 V
直流电流增益(hFE,最大值) 300 @ IC = -150 mA,VCE = -10 V
IC = -500 mA 时的 hFE(最小值 50
VCE(饱和)(最大值) @ IC/IB = -150/-15 mA -0.4 V
最大 VCE(饱和)@ IC/IB = -500/-50 mA -1.6 V
VBE(饱和)(最大值) @ IC/IB = -150/-15 mA -1.3 V
VBE(饱和)(最大值) @ IC/IB = -500/-50 mA -2.6 V
集电极截止电流(ICBO,最大值) -10 nA @ VCB = -50 V
转换频率 (fT) 200 MHz @ VCE = -20 V,IC = -50 mA
输出电容(Cobo) 8.0 pF @ VCB = -10 V,f = 1 MHz
输入电容(Cibo) 30 pF @ VEB = -2.0 V,f = 1 MHz
开启时间(吨) 45 毫微秒(典型值)
关闭时间 (toff) 100 毫微秒(典型值)
热阻 (RthJA) 403 摄氏度/瓦(最小焊盘)
工作结温 -55至+150摄氏度
包装 SOT-23-3 (TO-236-3, SC-59)
合规性 AEC-Q101、RoHS、无卤素、无锑
ESD 额定值(HBM) 4000 V(JEDEC 3A 级)
互补 NPN MMBT2222A

特点

  • 外延式平面芯片结构,性能可靠稳定
  • 额定 -60 V 集电极-发射极电压和 -600 mA 连续集电极电流
  • 高直流电流增益:IC = -150 mA 时 hFE 最小 100,可实现强信号放大
  • 集电极-发射极饱和电压低:IC = -150 mA 时,典型值为 -0.4 V,可实现高效开关
  • 过渡频率为 200 MHz,支持中频放大器应用
  • 通过 AEC-Q101 认证,符合汽车可靠性要求
  • 完全无铅、无卤素、无锑(绿色设备)
  • 互补 NPN 型 MMBT2222A 可用于推挽式和图腾柱式配置
  • ESD 保护高达 4000 V HBM(JEDEC 3A 级)
  • MSL 1 级 - 根据 J-STD-020 标准,地板寿命不受限制
  • UL 94V-0 易燃性等级模塑料

应用

  • 音频和传感器电路中的低功耗信号放大
  • 通用开关和负载控制(继电器、LED、小型电机)
  • 逻辑级转换和接口电路
  • 便携式设备中的电源管理和负载开关应用
  • 与 MMBT2222A(NPN 补充)配对的推挽放大器级
  • 汽车电子控制模块(通过 AEC-Q101 认证)
  • 工业控制和仪器仪表信号调节

MMBT2907A-7-F 是一款 PNP 小信号双极结型晶体管 (BJT),由 Diodes Incorporated 采用外延平面芯片制造工艺生产。该器件专为低功率放大和通用开关而设计,集电极-发射极电压额定值为 -60 V,连续集电极电流能力为 -600 mA,因此可广泛用于各种信号级和低功率负载驱动应用。该晶体管在 IC = -150 mA 时的最小直流电流增益 (hFE) 为 100,以最小的基极驱动电流提供强大的信号放大能力。在 IC = -150 mA 时,其集电极-发射极饱和电压通常为 -0.4 V,这确保了以最小的传导损耗实现高效开关,这对于电池供电和便携设备应用至关重要,因为电源效率直接影响到工作寿命。该器件的转换频率为 200 MHz,可用于中频放大器电路。MMBT2907A-7-F 采用紧凑型 SOT-23-3 表面贴装封装,非常适合高密度 PCB 布局。它通过了 AEC-Q101 认证,符合汽车电子产品严格的可靠性要求,并且完全无铅、无卤素、无锑(绿色器件)。互补 NPN 对应器件 MMBT2222A 使设计人员能够实现具有匹配电气特性的平衡推挽放大器级和互补开关电路。.

MMBT2907A-7-F 作为 PNP 双极结型晶体管在三个不同的工作区工作:

1.有源区(放大):当基极-发射极结为正向偏压(PNP 的 VBE 为负值),基极-集电极结为反向偏压时,晶体管工作在有源区。较小的基极电流 (IB) 控制着较大的集电极电流 (IC),其比率由直流电流增益 hFE 确定。在 IC = -150 mA 和 VCE = -10 V 时,hFE 在 100 到 300 之间,可提供大量信号放大。外延平面结构确保了整个工作温度范围内一致的增益特性。.

2.饱和区(开关导通):当基极-发射极和基极-集电极结均为正向偏压时,晶体管进入饱和状态。在这种状态下,集电极-发射极电压降至 VCE(sat),在 IC = -150 mA 和 IB = -15 mA 时通常为 -0.4 V。低饱和电压最大限度地降低了导通状态下的功率耗散,使器件作为负载开关变得高效。在较高电流(IC = -500 mA)时,VCE(饱和)会增加到最大 -1.6 V。.

3.截止区(开关关闭):当基极-发射极结的正向偏压不足(VEB < |VBE(on)|)时,晶体管处于截止状态。集电极电流减小到漏电水平(VCB = -50 V 时 ICBO 最大值 = -10 nA),从而有效地将负载与电源隔离。Ioff 状态可确保待机功耗最小,这对电池供电电路至关重要。 200 MHz 的过渡频率 (fT) 定义了电流增益下降到 1 的带宽上限。在实际放大器电路中,有用增益可达约 fT / hFE,为音频和中频信号处理应用提供了足够的带宽。.

针脚编号. 名称 类型 功能
1 基地 (B) 输入 控制晶体管的导通。相对于发射极的负基极电流会使基极-发射极结产生正向偏压,从而允许集电极电流流过。必须通过外部基极电阻进行限流。.
2 发射器 (E) 电源 用于 PNP 工作的电流源端子。在典型电路中,发射极连接到正电源轨。当驱动基极时,电流从发射极流向集电极。.
3 收集器 (C) 输出 汇流端。在开关应用中,集电极与负载相连。集电极电流由基极电流乘以 hFE 控制。最大连续额定电流:-600 mA。.
  • 低功耗音频和传感器信号放大:提供高增益(hFE 100-300),用于放大便携式和电池供电设备中麦克风、温度传感器和光电二极管发出的微弱信号
  • 通用负载开关:通过高效低饱和开关(VCE(sat) = -0.4 V typ)驱动继电器、LED、蜂鸣器和小型直流电机
  • 逻辑级和电压转换:混合信号系统中不同电压域之间的接口,利用 -60 V VCEO 额定值
  • 互补推挽放大器:与 MMBT2222A(NPN 互补)配对,用于 B/AB 类音频输出级和图腾柱驱动器配置
  • 汽车电子(AEC-Q101):车身电子设备、照明模块和传感器接口的信号调节和负载控制
制造商 部件编号 包装 主要说明
onsemi MMBT2907ALT3G SOT-23-3 引脚对引脚兼容,符合 AEC-Q101 标准,电气规格相同
Nexperia PMBT2907A,215 SOT-23-3 与 Nexperia 引脚兼容,60 V,-600 mA
二极管公司 MMBT2907AQ-7-F SOT-23-3 符合汽车行业标准的版本,完全支持 PPAP
Nexperia BC807-40,235 SOT-23-3 PNP 通用型,45 V,-500 mA,更高的 hFE(最大 630)
onsemi MMBT2907AWT1G SOT-323 占地面积更小(SOT-323),电气特性相同
意法半导体 SMBT2907A SOT-23-3 引脚对引脚替换,提供 NPN/PNP 双对版本
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