产品概览
The Infineon IRFP4668PBF is an N-channel power MOSFET utilizing advanced HEXFET technology, rated at 200 V with an extremely low on-resistance of 5.5 mOhm and a continuous drain current of 174 A. Packaged in a TO-247AC package, it is designed for high-efficiency switching applications including DC-DC converters, motor drives, and UPS systems.
主要规格
| VDS | 200 V |
| RDS(on) Max | 5.5 mOhm @ VGS=10V |
| ID (Continuous) | 174 A @ TC=25°C |
| Qg (Total Gate Charge) | 210 nC |
| 包装 | TO-247AC |
| Dissipation | 520 W @ TC=25°C |
特点
- Ultra-low RDS(on) of 5.5 mOhm for minimal conduction losses
- High current capability of 174 A
- 200 V drain-to-source voltage rating
- Low gate charge for efficient switching
- Lead-free (PbF) RoHS-compliant package
- Avalanche rated for rugged operation
应用
- DC-DC converters and voltage regulators
- Motor drive and inverter systems
- Uninterruptible power supplies (UPS)
- Solar inverter power stages
- Battery management and charging systems