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IRF9540N

-100V P-ch MOSFET, 117mR RDS(on), -19A, TO-220

8500

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制造商零件：

IRF9540N

包装：

TO-220AB (15.60 x 10.40 x 4.60 mm)

品牌：
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说明

产品概览

The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel power MOSFET with -0.117 Ohm RDS(on) at -10V gate drive and -19A continuous drain current in a TO-220 through-hole package.

主要规格

类型 P-Channel Enhancement MOSFET
VDSS -100 V
身份证 -19 A (continuous @ TC=25°C)
RDS(on) 0.117 Ohm max @ VGS=-10V
VGS(th) -2.0 to -4.0 V
Total Gate Charge 48 nC typical
功率耗散 110 W @ TC=25°C
工作温度 -55°C to +175°C
包装 TO-220AB (3-pin)

特点

  • -100V P-ch power MOSFET with 117mOhm RDS(on) at -19A in TO-220
  • Industry-standard P-channel for high-side switching and H-bridge

应用

  • High-side load switching and H-bridge motor drive at up to 100V

The IRF9540N from Infineon is an industry-standard -100V P-channel power MOSFET in a TO-220 through-hole package. The device features 0.117 Ohm maximum on-resistance at VGS=-10V with -19A continuous drain current rating, making it one of the most popular P-channel MOSFETs for high-side switching and H-bridge applications. The -100V breakdown voltage allows operation from 48V bus systems with margin. The N suffix denotes the improved version with lower RDS(on) compared to the original IRF9540. The TO-220 package provides 110W power dissipation at TC=25°C and is easily heatsink-mounted for high-power applications. As a P-channel device, it simplifies high-side switch design by eliminating the need for a bootstrap or charge-pump gate drive required by N-channel high-side switches.

The IRF9540N is a P-channel enhancement-mode vertical DMOS power MOSFET. (1) P-Channel Operation: Current flows from source to drain when the gate is pulled below the source voltage (negative VGS). The body diode is oriented with anode at drain and cathode at source, providing a freewheeling path in bridge configurations. (2) High-Side Advantage: In a high-side switch configuration, the source is connected to the positive supply rail and the load is between drain and ground. A P-channel MOSFET only requires the gate to be pulled below the source (to ground for on, to VCC for off), eliminating the bootstrap or charge-pump circuitry needed for N-channel high-side drivers. (3) RDS(on) Penalty: P-channel MOSFETs inherently have approximately 2-3x higher RDS(on) than N-channel devices of the same die area due to the lower mobility of holes compared to electrons. The 117mOhm RDS(on) is relatively high compared to N-channel devices at the same voltage/current rating, but the simplicity of the gate drive often justifies this trade-off.

针脚 名称 功能
1 G 大门
2 D 排水
3 S 资料来源
选项卡 D Drain (connected to case)
  • High-side load switching and H-bridge motor drive at up to 100V
制造商 部件编号 包装 说明
英飞凌 IRF9540 TO-220 Original version, higher Ron
Vishay IRF9540N TO-220 Pin-compatible, Vishay brand
onsemi FQPF27P06 TO-220F -60V, 27A, full-pack
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Materialparts is a professional global supplier of electronic components with over 20 years of industry experience. We provide one-stop supply of passive components, integrated circuits, as well as parts for industrial control, automotive electronics, consumer electronics and medical devices. Below are the unified shipping and payment policies applicable to all orders, samples and bulk purchases worldwide.

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Tel / WhatsApp: +86 13760382860

服务与包装

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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