FDT86244

The onsemi FDT86244 is an N-Channel Power Trench MOSFET produced using advanced Shielded Gate technology. This process has been optimized for low RDS(on), fast switching performance, and ruggedness. The device features a maximum drain-source voltage of 150V and continuous drain current of 2.8A, with RDS(on) of just 128mOhm at VGS=10V. The Shielded Gate construction reduces gate-to-drain charge (Miller charge) for faster switching transitions. With a total gate charge of only 4.9nC at VGS=10V, the FDT86244 is ideal for high-frequency switching applications. The 100% UIL testing ensures reliable avalanche operation. The SOT-223 package provides a good balance of power handling capability and board space efficiency.

The FDT86244 operates as a voltage-controlled N-Channel enhancement-mode MOSFET: 1) Gate Control: When VGS exceeds the threshold voltage (2.0-4.0V), the gate electric field creates an inversion layer in the P-body region, forming a conductive channel between drain and source. The Shielded Gate technology places a shield electrode between the gate and drain, reducing the gate-to-drain overlap capacitance and Miller charge for faster switching. 2) Conduction: At VGS=10V, the channel is fully enhanced, providing RDS(on) of 106mOhm typical. The trench structure increases cell density, reducing conduction losses. 3) Switching: The low gate charge (4.9nC total) allows rapid charging and discharging of the gate capacitance, enabling turn-on delay of 5.3ns and rise time of 1.3ns for high-frequency operation. 4) Avalanche: The 100% UIL test at 5A/135V/1mH guarantees the device can safely absorb inductive energy during unclamped switching events.

• Primary switch in low-power DC-DC converters and flyback supplies
• Load switch for battery-powered consumer electronics
• Motor drive and solenoid control in industrial systems
• Power management and hot-swap circuits
• LED driver switching element