产品概览
The CSD17313Q2 from Texas Instruments is a 30V N-channel NexFET power MOSFET optimized for 5V gate drive. With 24mOhm RDS(on) at VGS=8V and ultra-low 2.1nC gate charge, it minimizes conduction and switching losses in DC-DC converters. Housed in a 2mm x 2mm SON (WSON-6) package with exposed thermal pad.
主要规格
| VDS | 30V |
| RDS(on) at VGS=4.5V | 26mOhm typ, 32mOhm max |
| RDS(on) at VGS=8V | 24mOhm typ, 30mOhm max |
| Continuous Drain (package) | 5A |
| Continuous Drain (silicon, TC=25°C) | 19A |
| Gate Charge (Qg) | 2.1nC typ |
| VGS(th) | 1.3V typical |
| 工作温度 | -55 to 150°C |
| 包装 | SON 2mm x 2mm (WSON-6) |
特点
- Optimized for 5V gate drive
- Ultra-low Qg (2.1nC) and Qgd (0.4nC)
- Low RDS(on): 24mOhm at VGS=8V
- Low thermal resistance SON package
- Pb-free, RoHS, halogen-free
- Logic-level gate threshold
应用
- DC-DC buck and boost converters
- Battery load management
- Point-of-load power modules
- Motor drive and load switches
- Portable device power management