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BAT54T1G


30V 200mA Schottky diode, 0.32V VF, SOT-23, low leakage, AEC-Q101, signal/power steering

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制造商零件:

BAT54T1G

包装:

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

品牌:
产品类别:
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说明

产品概览

The BAT54T1G from onsemi is a 30V, 200mA Schottky barrier diode in a SOT-23 package. With 0.32V typical forward voltage and 2uA reverse leakage, it provides efficient rectification and steering for low-power signal and power circuits.

主要规格

Reverse Voltage 30 V
Forward Current 200 mA
Forward Voltage 0.32 V (typ at 1mA), 0.60V (max at 100mA)
Reverse Leakage 2 uA (max at 25V, 25C)
Junction Capacitance 5 pF (typ at 1MHz, 1V)
工作温度 -65C to +150C

特点

  • 0.32V ultra-low forward voltage for minimal signal loss
  • 200mA continuous current rating for low-power applications
  • 2uA low reverse leakage for precision signal steering
  • 5pF low junction capacitance for high-speed switching
  • SOT-23 compact surface-mount package
  • AEC-Q101 qualified for automotive applications

应用

  • Signal steering and clipping in low-voltage circuits
  • Power supply OR-ing and reverse polarity protection
  • DC-DC converter free-wheeling diode in low-power designs
  • Battery charging path steering in portable devices

The BAT54T1G from onsemi is a 30V, 200mA Schottky barrier diode in a SOT-23 surface-mount package. The Schottky barrier construction provides an ultra-low 0.32V typical forward voltage at 1mA, making it ideal for low-voltage signal steering where voltage drop is critical. The 200mA continuous forward current and 30V reverse voltage ratings cover a wide range of low-power rectification, steering, and protection applications. The 2uA maximum reverse leakage current at 25V ensures minimal signal distortion in precision circuits. The 5pF typical junction capacitance supports high-speed switching applications without excessive signal degradation. The device is AEC-Q101 qualified, making it suitable for automotive signal conditioning and protection circuits. The SOT-23 package provides a compact footprint for space-constrained PCB designs. The BAT54 series also includes common-cathode and common-anode dual configurations for compact rectifier and steering networks.

The BAT54T1G uses a metal-semiconductor (Schottky) junction for efficient rectification. (1) Schottky Barrier: A rectifying contact between a metal (typically molybdenum or titanium-tungsten) and N-type silicon creates a barrier that allows electron flow in one direction with minimal voltage drop. Only majority carriers (electrons) participate in conduction, eliminating minority carrier storage. (2) Forward Conduction: When the anode is biased positive relative to the cathode, electrons cross the Schottky barrier with minimal energy loss, producing the low 0.32V typical forward drop at low currents. At higher currents (100mA), the forward voltage increases to 0.60V maximum due to series resistance. (3) Reverse Blocking: When reverse biased, the Schottky barrier blocks current flow. The 2uA maximum leakage at 25V is very low for a Schottky diode, achieved through optimized barrier height and guard ring design. (4) Low Capacitance: The 5pF junction capacitance is due to the small junction area required for 200mA rating. This enables high-speed switching without significant signal delay or distortion.

针脚 名称 类型 功能
1 阳极 阳极 Positive terminal
2 阴极 阴极 Negative terminal (band marking)
3 N/C - Not connected (or anode in some variants)
  • Signal steering and clipping in low-voltage circuits at 0.32V VF
  • Power supply OR-ing and reverse polarity protection at 30V/200mA
  • DC-DC converter free-wheeling diode in low-power designs with 5pF capacitance
  • Battery charging path steering in portable devices with AEC-Q101 qualification
制造商 部件编号 包装 说明
Nexperia BAT54S,215 SOT-23 Common cathode dual
Vishay BAT54S-G3-08 SOT-23 Common cathode dual
onsemi BAT54CW T1G SOT-23 Common cathode variant
二极管公司 RB521S30T1G SOT-23 30V 200mA equivalent
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