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ADR4550ARZ-R7


5.0V ultra-low noise Vref, 4ppm/C, 1.75uVpp noise, 950uA Iq, +/-10mA out, SOIC-8

5230

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制造商零件:

ADR4550ARZ-R7

包装:

SOIC-8 (4.90 x 3.91 x 1.50 mm)

品牌:
产品类别:
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说明

产品概览

The ADR4550ARZ-R7 from Analog Devices is an ultra-low noise, high-precision 5.0V voltage reference with 4ppm/°C maximum temperature coefficient (A grade), +/-0.04% initial accuracy, and 950uA maximum supply current in an 8-pin SOIC package.

主要规格

Output Voltage 5.0 V
Initial Accuracy +/-0.04% (A grade), +/-0.02% (B grade)
Temperature Coefficient 4 ppm/°C max (A grade, -40 to +125°C)
Noise (0.1-10Hz) 1.75 uV p-p typical
Supply Current 700 uA typical, 950 uA max
输入电压 3 V to 15 V (for 5V output)
Dropout Voltage 300 mV max @ 2mA (VOUT >= 3V)
输出电流 +10 mA source / -10 mA sink
Load Regulation 30 ppm/mA typical (source)
Line Regulation 1 ppm/V typical
Long-Term Drift 8 ppm / 4500 hours typical
工作温度 -40°C to +125°C
包装 SOIC-8

特点

  • 5.0V ultra-low noise reference with 4ppm/°C drift over -40 to +125°C
  • +/-0.02% initial accuracy (B grade) with 8ppm/4500hr long-term stability
  • 1.75uV p-p noise for high-resolution ADC/DAC reference applications
  • 950uA max supply current with 300mV dropout for portable applications
  • +/-10mA output current capability with sink and source capability

应用

  • Precision data acquisition and high-resolution ADC/DAC voltage reference
  • Industrial instrumentation and medical equipment reference
  • Automotive battery monitoring and precision measurement systems

The ADR4550ARZ-R7 from Analog Devices is an ultra-low noise, high-precision 5.0V voltage reference in the ADR45xx family. The A-grade device offers +/-0.04% initial accuracy and 4ppm/C maximum temperature coefficient over the -40C to +125C range. Higher-precision B/C/D grades offer +/-0.02% initial accuracy and drift as low as 0.8ppm/C. The innovative core topology achieves industry-leading noise performance of 1.75uV p-p (0.1-10Hz), making it ideal for high-resolution (20+ bit) ADC and DAC reference applications. The device operates from input voltages as low as 5.3V (300mV dropout at 2mA for VOUT >= 3V) and draws only 700uA typical supply current. The output can source up to 10mA and sink up to 10mA, with load regulation of 30 ppm/mA. Long-term output voltage drift is 8ppm per 4500 hours, ensuring stability over the product lifetime. The -R7 suffix indicates 1000-piece tape and reel packaging.

The ADR4550ARZ-R7 uses an innovative bandgap reference core topology. (1) Core Architecture: The reference uses a proprietary core topology that achieves higher accuracy and lower noise than traditional bandgap or XFET references. The core generates a stable voltage that is inherently insensitive to temperature variations and supply voltage changes. (2) Temperature Stability: Curvature correction circuits compensate for higher-order temperature dependencies, achieving drift as low as 0.8ppm/C in D-grade devices. Low thermally-induced output voltage hysteresis (the voltage shift that occurs when the device is cycled through temperature) ensures accuracy is maintained after soldering and thermal cycling. (3) Low Noise: The core topology minimizes the generation of 1/f noise, resulting in 1.75uV p-p noise from 0.1Hz to 10Hz. This is critical for high-resolution ADCs where reference noise directly impacts the effective number of bits. (4) Output Stage: The output buffer can source and sink up to 10mA, allowing the reference to drive dynamic loads such as ADC reference inputs that draw current pulses during conversion. The low output impedance and 90dB ripple rejection at 1kHz minimize output perturbation from supply noise.

针脚 名称 功能
1 VIN Supply input (5.3V to 15V)
2 接地 地面
3,4 北卡罗来纳州 无连接
5 北卡罗来纳州 无连接
6 VOUT 5.0V reference output (0.1uF cap min)
7 北卡罗来纳州 无连接
8 接地 地面
  • 5.0V reference for 20+ bit ADC/DAC with 1.75uVpp noise
  • Industrial instrumentation and medical equipment precision reference
  • Automotive battery monitoring and high-accuracy measurement systems
制造商 部件编号 包装 说明
ADI ADR4550BRZ-R7 SOIC-8 B grade, 2ppm/C, +/-0.02%
TI REF5050AIDR SOIC-8 5V, 3ppm/C, similar spec
TI REF5050DR SOIC-8 5V, 0.5ppm/C, D grade
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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