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STW20NM50

500V N-ch MOSFET, 200mOhm, 20A, MDmesh, TO-247

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Manufacturer Part：

STW20NM50

Package：

TO-247 (15.75 x 9.40 x 5.15 mm)

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Description

Product Overview

The STW20NM50 from STMicroelectronics is a 500V N-channel MDmesh Power MOSFET with 200mOhm RDS(on), 20A ID in TO-247 package.

Key Specifications

VDS 500V
RDS(on) max 250 mOhm @ VGS=10V
ID (TC=25C) 20A
ID (TC=100C) 12.6A
VGS(th) 3-5V
Qg total 40 nC typical
Ciss 1480 pF
EAS 650 mJ (single pulse)
dv/dt 15 V/ns
PTOT 192W @ TC=25C
Package TO-247
Operating Temperature -65 to +150 C (TJ)

Features

  • MDmesh second-generation technology
  • 100% avalanche tested
  • Low 40nC gate charge
  • High dv/dt capability (15V/ns)

Applications

  • Switch-mode power supplies
  • Half/full bridge converters
  • Motor drive inverters
  • Welding equipment

The STW20NM50 from STMicroelectronics is a 500V N-channel Power MOSFET using second-generation MDmesh technology in TO-247 package. The MDmesh multiple-drain structure dramatically reduces RDS(on) to 200mOhm typical while maintaining low gate charge of 40nC. The device is 100% avalanche tested with 650mJ single-pulse energy rating. The 192W power dissipation and low thermal resistance (0.65C/W) enable high-power switching applications.

The STW20NM50 operates as a high-voltage N-channel power MOSFET using MDmesh technology. (1) The MDmesh (Multiple Drain mesh) structure uses a strip layout for the drain region, reducing the JFET effect and on-resistance compared to conventional planar DMOS. The vertical current flow through multiple parallel strips provides low RDS(on) of 200mOhm with 500V breakdown voltage. (2) The gate charge of 40nC enables fast switching with modest gate drive current. At VDD=400V, ID=20A, the typical turn-on delay is 24ns with 16ns rise time, and turn-off delay of 40ns with 12ns fall time. (3) The integrated body diode provides a freewheeling path with 1.5V forward voltage at 20A. The reverse recovery time of 350ns and Qrr of 4.6uC should be considered for bridge and half-bridge topologies. The 15V/ns dv/dt rating ensures robustness in inductive switching applications.

Pin Name Function
1 G Gate
2 D Drain (tab)
3 S Source
  • SMPS primary-side switching with 500V rating
  • Half/full bridge converters with 40nC low Qg
  • Motor drive inverters with 650mJ avalanche rating
  • Welding equipment with 192W power dissipation
Model Manufacturer Key Difference
STW20NM50FD ST Fast body diode version
STW26NM50 ST 30A, 100mOhm, higher power
FCA20N60N Fairchild 600V, SuperFET
IRFP460PBF Infineon 500V, 20A, TO-247
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Contact Information

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Service & Packaging

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Contact Information

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Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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