Product Overview
The PMV250EPEAR is a P-Channel enhancement mode Trench MOSFET from Nexperia (formerly NXP) featuring -40V drain-source voltage, -1.5A continuous drain current, and 240 mΩ maximum on-resistance in a compact SOT-23 (TO-236AB) package. AEC-Q101 qualified with logic-level gate drive, it is designed for high-side load switching, relay driving, and general-purpose switching in automotive and industrial applications.
Key Specifications
- Channel: P-Channel Enhancement Mode (Trench MOSFET)
- V_DS: -40V
- V_GS: ±20V
- I_D (Continuous): -1.5A (Ta=25°C)
- R_DS(on): 240 mΩ max at V_GS=-10V, I_D=-1.3A
- V_GS(th): -1V ~ -2.5V
- Gate Charge (Qg): 4.7 nC typical at V_GS=-10V
- C_iss: 450 pF typical at V_DS=-20V
- Power Dissipation: 480 mW (Ta=25°C), 6.25W (Tc=25°C)
- ESD Protection: >1 kV HBM
- Operating Temperature: -55°C ~ +150°C
- Package: SOT-23 (TO-236AB), 3 pins, Surface Mount
- Qualification: AEC-Q101
Features
- Logic-level gate drive compatible
- Very fast switching speed
- Trench MOSFET technology for low R_DS(on)
- AEC-Q101 qualified for automotive applications
- ESD protection >1 kV HBM
- Compact SOT-23 footprint
- NXP/Nexperia automotive-grade reliability
Applications
- High-side load switches
- Relay drivers
- High-speed line drivers
- Switching circuits
- Automotive body electronics