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NTMFS4935NT1G

30V, 93A N-ch MOSFET, 2.7mOhm Rds, SO-8FL, CPU power delivery

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Manufacturer Part：

NTMFS4935NT1G

Package：

SO-8FL / Power33 (5.00 x 6.00 x 1.75 mm)

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Description

Product Overview

The NTMFS4935NT1G from onsemi is a 30 V, 93 A N-channel power MOSFET in a Power33 (SO-8FL) package. With an ultra-low RDS(on) of 2.7 mΩ at VGS = 10 V and optimized gate charge of 49.4 nC, it is designed for CPU power delivery and high-current DC-DC conversion in computing applications.

Key Specifications

VDS 30 V
ID (max) 93 A
RDS(on) max @ VGS=10V 3.2 mΩ
RDS(on) typ @ VGS=10V 2.7 mΩ
RDS(on) max @ VGS=4.5V 4.2 mΩ
Qg typ @ VGS=10V 49.4 nC
Qg typ @ VGS=4.5V 22 nC
VGS(th) max 1.63 V
Ciss typ 3579 pF
Package SO-8FL (Power33)

Features

  • Ultra-low RDS(on) of 2.7 mΩ typical for minimal conduction loss
  • Optimized gate charge for efficient high-frequency switching
  • Low capacitance to minimize driver losses
  • 30 V transient breakdown voltage capability
  • Pb-Free, Halogen Free, and RoHS compliant

Applications

  • CPU and GPU Vcore power delivery
  • Notebook, desktop, and server VRM stages
  • High-current DC-DC buck converters
  • Point-of-load power conversion
  • Game console and graphics card power stages

The NTMFS4935NT1G is a 30 V N-channel power MOSFET from onsemi housed in the Power33 SO-8FL package, optimized for CPU and GPU voltage regulator (VRM) applications in computing platforms. The device features an ultra-low typical RDS(on) of 2.7 mΩ at VGS = 10 V and 3.7 mΩ at VGS = 4.5 V, minimizing conduction losses in high-current buck converter stages. The 93 A maximum continuous drain current rating supports demanding multi-phase VRM designs for notebooks, desktops, servers, and game consoles. The MOSFET achieves a balance between low RDS(on) and moderate gate charge (49.4 nC at VGS = 10 V), enabling efficient switching at frequencies up to several hundred kHz. The SO-8FL package features an exposed drain pad for low thermal resistance of 2.6°C/W junction-to-case, supporting high power dissipation in compact PCB footprints.

The NTMFS4935NT1G is a vertical DMOS N-channel enhancement-mode power MOSFET. When a positive gate-source voltage exceeding the threshold (1.2 to 1.63 V) is applied, an inversion layer forms in the P-body region beneath the gate oxide, creating a conduction channel between source and drain. Current flows vertically from the drain (exposed pad) through the lightly doped epitaxial layer and channel to the source. The ultra-low 2.7 mΩ on-resistance is achieved through a high-density cell structure with many parallel MOSFET cells, each contributing a small channel resistance. The V-groove or trench gate structure maximizes channel density per unit area. During switching, the gate charge must be supplied or removed through the gate driver to charge or discharge the input capacitance (Ciss = 3579 pF). The low Qg/Qgs ratio and moderate Qgd of 3.0 nC help minimize switching losses during the Miller plateau region.

Pin Name Function
1 Source Source terminal; connected to inductor return or output node
2 Gate Gate drive input; connect to driver output through low-impedance trace
3 Source Source terminal (parallel with Pin 1)
4-8 Source Source terminals (multiple bond wires for low inductance)
Pad Drain Exposed pad on bottom; connected to VIN for high-side or SW node for low-side

Package: SO-8FL (Power33). The exposed drain pad on the bottom of the package must be soldered to the PCB for proper electrical connection and thermal dissipation. RθJC = 2.6°C/W, RθJA = 47.5°C/W.

  • CPU Vcore VRM: High-side or low-side switch in multi-phase synchronous buck converters for notebook and desktop processors
  • Server Power Stages: High-current point-of-load conversion for server CPU and memory rails
  • DC-DC Converter: Output stage in high-current buck converters for networking and telecom cards
  • Game Console Power: GPU and CPU power delivery in high-performance gaming systems
  • Graphics Card VRM: Multi-phase buck converter switches for high-end GPU core voltage
Model Manufacturer VDS ID RDS(on) Package Notes
NTMFS4C05NT1G onsemi 30 V 133 A 1.65 mΩ SO-8FL Lower RDS, higher ID
IRFH7921TRPBF Infineon 30 V 100 A 2.2 mΩ PQFN Competitive alternative
SIR800DP-T1-GE3 Vishay 30 V 80 A 2.8 mΩ PowerPAK Similar performance
CSD87350Q5D TI 30 V 40 A 5.6 mΩ SON Half-bridge module
NTMFS4938NT1G onsemi 30 V 54 A 6.5 mΩ SO-8FL Lower current, higher RDS
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