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BAS16XV2T1G

100V, 200mA high-speed switching diode, 6ns trr, SOD-523, Pb-Free

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Manufacturer Part：

BAS16XV2T1G

Package：

SOD-523 (CASE 502) (1.25 x 0.85 x 0.55 mm)

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Description

Product Overview

The BAS16XV2T1G from onsemi is a high-speed switching diode in an ultra-small SOD-523 package. Rated at 100 V reverse voltage and 200 mA continuous forward current, it features a low reverse recovery time of 6 ns and low diode capacitance of 2.0 pF, making it ideal for high-speed switching and general-purpose signal applications in space-constrained designs.

Key Specifications

Reverse Voltage (VR) 100 V
Forward Current (IF) 200 mA
Forward Voltage (VF @ 10 mA) 855 mV (max)
Reverse Recovery Time (trr) 6.0 ns (max)
Diode Capacitance (CD) 2.0 pF (max)
Reverse Leakage (IR @ 100 V) 1.0 µA (max)
Peak Forward Surge 500 mA
Power Dissipation 200 mW
Package SOD-523 (CASE 502)

Features

  • Ultra-small SOD-523 package for space-constrained designs
  • High-speed switching with 6 ns reverse recovery time
  • Low capacitance: 2.0 pF at VR = 0 V, 1 MHz
  • AEC-Q101 qualified (SBAS16XV2 variant)
  • Pb-Free, Halogen Free, and RoHS compliant
  • Reflow solderable up to 260°C

Applications

  • High-speed signal switching and routing
  • Reverse polarity protection in portable devices
  • Logic-level signal clipping and clamping
  • ESD protection steering diodes
  • General-purpose diode functions in mobile and wearable electronics

The BAS16XV2T1G is a high-speed switching diode from onsemi housed in the ultra-compact SOD-523 (CASE 502) surface-mount package. With a 100 V reverse voltage rating and 200 mA continuous forward current capability, this device is designed for general-purpose switching applications where board space is at a premium. The diode exhibits a maximum reverse recovery time of 6.0 ns and a junction capacitance of just 2.0 pF, ensuring minimal signal distortion in high-speed circuits. Forward voltage is specified at 855 mV maximum at 10 mA. The SOD-523 package measures only 1.25 x 0.85 x 0.55 mm, making it one of the smallest discrete diode packages available. The device is Pb-Free, Halogen Free, and RoHS compliant, with an automotive-qualified SBAS16XV2 variant available for AEC-Q101 applications.

The BAS16XV2T1G operates as a standard PN junction switching diode. Under forward bias, majority carriers cross the junction producing a forward current with a characteristic voltage drop of approximately 715 to 855 mV at 10 mA. Under reverse bias, the depletion region widens blocking current flow up to the 100 V breakdown voltage, with a maximum leakage of 1.0 µA at full reverse voltage. The fast 6 ns reverse recovery time is achieved through optimized doping profiles and a small junction area, which minimizes stored charge to 45 pC. This low stored charge and the 2.0 pF junction capacitance enable the diode to switch rapidly between conducting and blocking states, making it suitable for high-frequency signal paths where switching speed and low capacitance are critical.

Pin Name Function
1 Cathode Negative terminal; marked with bar on package body
2 Anode Positive terminal

Package: SOD-523 (CASE 502). The cathode bar marking on the top surface identifies Pin 1. The device marking code is A6.

  • High-Speed Signal Switching: Digital logic level steering and signal routing in communication circuits
  • Reverse Polarity Protection: Battery-powered portable and wearable devices requiring minimal voltage drop
  • Signal Clipping and Clamping: Logic-level waveform shaping and ESD steering networks
  • Mixing and Detection: RF signal detection and mixer circuits in receivers
  • General-Purpose Diode Functions: Blocking, freewheeling, and bias networks in compact layouts
Model Manufacturer VR IF trr Package Notes
BAS16-7-F Diodes Inc 100 V 200 mA 6 ns SOD-323 Equivalent, larger package
1N4148W-7-F Diodes Inc 100 V 300 mA 4 ns SOD-123 Higher current, larger package
BAS16HT1G onsemi 100 V 200 mA 6 ns SOT-23 Same die, different package
BAV16W-7-F Diodes Inc 100 V 200 mA 5 ns SOD-123 Lower VF alternative
BAS21-7-F Diodes Inc 250 V 200 mA 50 ns SOD-123 Higher voltage rating
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Contact Information

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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