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BC846BLT1G

NPN BJT, 65V, 100mA, hFE 110-450, SOT-23, general-purpose switch/amp

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Manufacturer Part：

BC846BLT1G

Package：

SOT-23 (2.90 x 1.30 x 1.00 mm)

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Description

Product Overview

The BC846BLT1G from onsemi is a general-purpose NPN bipolar junction transistor in a SOT-23 package. With a 65 V collector-emitter voltage rating, 100 mA collector current, and high DC current gain (hFE = 110-450), it is widely used for low-power switching and amplification in portable and space-constrained applications.

Key Specifications

Type NPN
VCEO 65 V
IC (max) 100 mA
hFE (B suffix) 110 to 450
VCE(sat) 0.25 V max @ 10 mA
fT 250 MHz (transition frequency)
Power Dissipation 225 mW
Package SOT-23

Features

  • High current gain: hFE = 110-450 for B-group selection
  • Low saturation voltage: 0.25 V max at 10 mA
  • High transition frequency: 250 MHz
  • Compact SOT-23 surface-mount package
  • Pb-Free and RoHS compliant

Applications

  • General-purpose low-power switching
  • Signal amplification and buffering
  • LED driver switching
  • Logic level translation
  • Sensor interface circuits

The BC846BLT1G from onsemi is a general-purpose NPN bipolar junction transistor in a compact SOT-23 surface-mount package. Part of the widely used BC846 series, the B-suffix variant offers a DC current gain (hFE) range of 110 to 450, making it suitable for both switching and amplification applications. The device is rated at 65 V collector-emitter voltage and 100 mA continuous collector current, with a low saturation voltage of 0.25 V maximum at 10 mA collector current. The 250 MHz transition frequency supports moderate-speed switching and RF signal applications up to VHF frequencies. The SOT-23 package measures only 2.90 x 1.30 x 1.00 mm, enabling high-density PCB layouts in portable and space-constrained electronics. Pb-Free and RoHS compliant.

The BC846BLT1G is an NPN bipolar junction transistor (BJT) consisting of a thin P-type base region sandwiched between N-type emitter and collector regions. In the active region, a small base current controls a larger collector current through current amplification (hFE). The B suffix indicates the middle gain group with hFE from 110 to 450. When used as a switch, the transistor is driven into saturation by applying sufficient base current (IB > IC/hFE), reducing VCE to the saturation voltage of approximately 0.25 V. When used as an amplifier, the transistor operates in the active region where the collector current is proportional to the base current. The 250 MHz transition frequency (fT) indicates the frequency at which the current gain drops to unity, setting the practical bandwidth limit.

Pin Name Function
1 Base Control input; small current here controls collector-emitter current
2 Emitter Current return; connected to ground in common-emitter configuration
3 Collector Main current terminal; connected to load and supply
  • LED Switching: Low-side NPN switch for indicator LED arrays in consumer electronics
  • Signal Buffering: Emitter-follower or common-emitter amplifier stages for sensor signal conditioning
  • Logic Level Translation: Open-collector level shifter between 3.3 V and 5 V logic domains
  • Relay and Solenoid Drive: Pre-driver stage for relay coils and small solenoids
  • General Switching: Load switch for bias networks, enable pins, and control signals
Model Manufacturer Type VCEO IC hFE Package Notes
BC847BLT1G onsemi NPN 45 V 100 mA 110-450 SOT-23 Lower voltage variant
BC848BLT1G onsemi NPN 30 V 100 mA 110-450 SOT-23 Lowest voltage variant
MMBT3904LT1G onsemi NPN 40 V 200 mA 100-300 SOT-23 Higher current alternative
BC846B-7-F Diodes Inc NPN 65 V 100 mA 110-450 SOT-23 Direct equivalent
BC846BWH6327 Infineon NPN 65 V 100 mA 110-450 SOT-323 Smaller package equivalent
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