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NTJD4001NT1G

Dual N-ch MOSFET, 30V, 250mA, 1.0Ω Rds@4V, common source, SC-88/SOT-363, ESD-protected, -55~150°C

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Manufacturer Part：

NTJD4001NT1G

Package：

SC-88 / SC-70-6 / SOT-363 (2.0 x 1.25 x 0.9 mm, 0.65mm pitch)

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Product Categories：

Integrated Circuits ICs, Transistors

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Description

The NTJD4001NT1G from onsemi is a dual N-channel enhancement-mode small-signal MOSFET in a 6-pin SC-88 (SOT-363/SC-70-6) package (2.0 x 1.25 x 0.9 mm). Both channels share a common source (pin 3). Key specs per channel: 30-V VDSS, 250-mA continuous drain current, 1.0 Ω typical RDS(on) at VGS=4V, 1.5 Ω max RDS(on) at VGS=4V, 1.2-V typical VGS(th), 0.9 nC total gate charge, 20 pF input capacitance, 17-ns turn-on delay, 82-ns fall time, and 272-mW power dissipation. ESD-protected gate. Operating temperature range is -55°C to +150°C (TJ).

Product Introduction:NTJD4001NT1G Product Introduction

The NTJD4001NT1G from onsemi is a dual N-channel small-signal MOSFET specifically designed for Li-ion battery-powered portable devices such as cell phones, PDAs, and digital still cameras. The two MOSFETs share a common source pin, making the device ideal for half-bridge, load-switch, and level-shifting applications where both transistors connect to the same ground reference.

The 30-V drain-source voltage rating provides ample margin for Li-ion battery applications (2.7-4.2 V) and also supports 5-V and 12-V logic-level switching. The 1.0-Ω typical RDS(on) at VGS = 4 V results in only 62.5 mW of conduction loss at 250 mA, well within the 272-mW package rating.

The gate charge of 0.9 nC (typical at VGS = 5 V) is extremely low, enabling fast switching with minimal gate-drive power. This makes the NTJD4001N suitable for high-frequency DC-DC converter applications (up to several MHz) where gate-drive losses must be minimized.

The ESD-protected gate can withstand electrostatic discharge events during handling and assembly, a practical benefit in high-volume consumer electronics manufacturing. The 1.2-V typical threshold voltage allows the MOSFETs to be driven directly from 1.8-V logic (with RDS(on) increasing to 2.5 Ω at VGS = 2.5 V).

The SC-88 (SOT-363) package occupies only 2.5 mm² of board area, making it one of the smallest dual-MOSFET packages available. The MSL-1 rating ensures unlimited floor life before soldering.

An automotive-qualified version (NVTJD4001NT1G) with AEC-Q101 compliance is available for automotive applications.

The common-source configuration means that the two MOSFETs cannot be used independently when different source voltages are required. For independent dual N-channel MOSFETs with isolated sources, consider the NTJD4002NT1G or 2N7002KVT1G.

Working Principle:NTJD4001NT1G Working Principle

**N-Channel Enhancement MOSFET:** Each channel is an N-channel enhancement-mode MOSFET. With VGS below the threshold (VGS(th) = 1.2 V typical), no channel forms and the drain-source path is high-impedance (off state). When VGS exceeds VGS(th), an inversion layer forms beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(on)) decreases with increasing VGS as the inversion layer strengthens.

**Common-Source Configuration:** Both MOSFETs share pin 3 (Source 1 = Source 2). This configuration is natural for half-bridge circuits where both low-side switches connect to ground, and for load-switch pairs where both loads return to the same ground. The shared source reduces pin count from 8 to 6, enabling the tiny SC-88 package.

**ESD-Protected Gate:** The gate terminal includes internal ESD protection structures (typically a Zener clamp or back-to-back diodes) that shunt ESD energy away from the thin gate oxide. The protection allows handling and assembly without special precautions while the gate oxide remains protected against electrostatic events up to the specified ESD rating.

**Body Diode:** Each MOSFET has an inherent body (parasitic) diode from source to drain (forward-biased when VSD > 0.65 V). This diode conducts during dead-time in half-bridge switching and must be considered in circuit design. The reverse recovery time of 12.4 ns is fast enough for most low-power switching applications.

Pin Description:NTJD4001NT1G Pin Definition and Functions

Pin	Name	Type	Description
1	Drain 1	O	Channel 1 drain; 30V max; 250mA continuous; connect to load or half-bridge node
2	Gate 1	I	Channel 1 gate; ESD-protected; drive with 1.8-5V logic for switching; VGS max ±20V; 0.9nC gate charge
3	Source 1/2	P/G	Common source for both channels; typically connected to ground for low-side switching; 250mA per channel max
4	Gate 2	I	Channel 2 gate; independent gate control; same characteristics as Gate 1
5	Drain 2	O	Channel 2 drain; independent drain connection; same voltage/current ratings as Drain 1
6	Drain 2	O	Channel 2 drain (parallel with pin 5); both pins 5 and 6 are internally connected; connect together on PCB

Application Scenarios:In which products and applications isNTJD4001NT1G used

Application	Description
Li-Ion Battery Load Switch	Common-source dual MOSFET as low-side load switches for two independent battery-powered subsystems; MCU GPIO drives gates at 1.8-3.3V; 1Ω RDS(on) at 4V gives <100mV drop at 100mA; ESD-protected gate survives handling
Half-Bridge DC-DC Converter	Two N-ch MOSFETs form synchronous buck converter half-bridge; common source = ground; gate 1 = high-side, gate 2 = low-side (or vice versa); 0.9nC gate charge enables MHz switching; 30V rating for 5V/12V input buck converters
Logic-Level Voltage Translator	Open-drain level shifting from 1.8V logic to 3.3V/5V bus; each MOSFET pulls down a bus line through RDS(on); gate driven by low-voltage logic; pull-up resistor on drain side sets high level; bidirectional with bus protocol

Alternative Models:What chips are recommended as replacements for NTJD4001NT1G

Model	Manufacturer	Compatibility	Key Difference
NVTJD4001NT1G	onsemi	Automotive Version	Same die; AEC-Q101 qualified; SOT-363; use for automotive applications requiring qualification
NTJD4002NT1G	onsemi	Series Variant (Isolated Sources)	Dual N-ch MOSFET with independent source pins; 8-pin package; use when two MOSFETs need different source voltages
2N7002KVT1G	onsemi	Functional Alternative	Dual N-ch MOSFET; 60V; 300mA; SC-88; independent sources; higher voltage rating; use for higher-voltage switching
BSS138DW-7-F	Diodes Inc	Competitive Alternative	Dual N-ch MOSFET; 50V; 220mA; SC-88; common source; similar specs; use as alternate source for dual N-ch in SC-88