Home > Integrated Circuits ICs > IRF640PBF

IRF640PBF

N-channel power MOSFET, 200 V, 18 A, 0.18 ohm, TO-220AB, HEXFET

11500

Effective Inventory

Go to Inquiry

Image for reference only

Manufacturer Part：

IRF640PBF

Package：

TO-220AB (10.67 x 4.83 x 16.51 mm, through-hole)

Description

Product Overview

The IRF640PBF from Infineon Technologies (formerly International Rectifier) is an N-channel power MOSFET from the HEXFET family with 200 V drain-source voltage, 18 A continuous drain current, and 0.18 ohm on-resistance. Packaged in a through-hole TO-220AB package, it is rated for 125 W power dissipation and features fully avalanche-rated construction.

Key Specifications

Drain-Source Voltage (VDSS)	200 V
On-Resistance (RDS(on))	0.18 ohm max @ VGS=10 V
Continuous Drain Current	18 A @ TC=25°C
Power Dissipation	125 W @ TC=25°C
Gate Threshold Voltage	2.0 V to 4.0 V
Gate Charge (Qg)	63 nC typical
Avalanche Energy (EAS)	580 mJ
Operating Junction Temp	-55°C to 150°C

Features

Advanced process technology for low on-resistance
200 V drain-source voltage rating
Fully avalanche-rated for rugged inductive switching
Dynamic dv/dt rating for reliable operation
Fast switching speed for efficient power conversion
Industry-standard TO-220AB through-hole package
Pb-free (PBF) terminal finish
Ease of paralleling for high-current applications

Applications

Switch-mode power supplies and DC-DC converters
Motor drive and H-bridge circuits
Audio amplifier output stages
Load switching and power distribution

Product Introduction:IRF640PBF Product Introduction

The IRF640PBF from Infineon Technologies is an N-channel power MOSFET from the classic HEXFET family, designed for switching applications requiring 200 V blocking voltage and 18 A continuous current capability. With a maximum on-resistance of 0.18 ohm at VGS=10 V, the device achieves low conduction losses in medium-voltage power conversion circuits. The fifth-generation HEXFET process technology provides an excellent balance of low on-resistance and fast switching speed. The IRF640PBF is fully avalanche rated, meaning it can withstand repetitive avalanche energy events without degradation, a critical requirement in inductive load switching applications such as motor drives and relay replacements. The industry-standard TO-220AB through-hole package provides excellent thermal performance with a junction-to-case thermal resistance of 1.0°C/W, supporting up to 125 W power dissipation with adequate heatsinking.

Working Principle:IRF640PBF Working Principle

The IRF640PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET: (1) In the cutoff region (VGS below threshold of 2-4 V), no conducting channel exists between drain and source. The device blocks voltages up to 200 V, with leakage current below 25 uA at rated voltage. (2) When VGS exceeds the threshold voltage, an inversion layer forms at the silicon surface beneath the gate oxide, creating an N-type channel that connects the drain and source regions. The 0.18 ohm on-resistance determines conduction losses during steady-state operation. (3) During switching transitions, the gate charge must be supplied or removed through the gate driver. The total gate charge of 63 nC (typical) at VDS=160 V and VGS=10 V determines the switching losses and the required gate driver capability. The Miller plateau charge (Qgd=33 nC) causes the most significant gate voltage plateau during turn-on and turn-off. (4) The integral body diode provides a reverse conduction path from source to drain, useful in half-bridge and H-bridge motor drive configurations. The body diode reverse recovery time of 251 ns (max) and recovery charge of 1394 nC (max) must be considered in high-frequency switching applications.

Pin Description:IRF640PBF Pin Definition and Functions

Pin No.	Pin Name	Function
1	Gate	Gate control input; apply positive voltage relative to source to turn on
2	Drain	Drain terminal; connects to load or high-voltage rail
3	Source	Source terminal; connects to ground reference
Tab	Drain	Drain tab (connected to pin 2, provides thermal path)

Application Scenarios:In which products and applications isIRF640PBF used

Switch-mode power supply primary-side switching where 200 V rating and 0.18 ohm RDS(on) support efficient off-line or DC-DC conversion at moderate power levels
Class D audio amplifier output stages requiring 200 V devices with low on-resistance and fast switching for high-fidelity PWM amplification
Motor drive half-bridge or H-bridge circuits where the integral body diode provides freewheeling current path and avalanche rating handles inductive kickback
Load switching and power distribution in 48 V and 80 V bus systems where the TO-220 package enables efficient heatsinking for high-power operation

Alternative Models:What chips are recommended as replacements for IRF640PBF

Model	Brand	VDSS	ID	RDS(on)
IRF640NPBF	Infineon	200 V	18 A	0.15 ohm
IRF640NSPbF	Infineon	200 V	18 A	0.15 ohm
FQA19N20	onsemi	200 V	19 A	0.16 ohm
STW20NM50	ST	500 V	20 A	0.27 ohm
IRF740PBF	Infineon	400 V	10 A	0.55 ohm