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IRF3415STRLPBF

N-Channel HEXFET MOSFET, 150V, 43A, 42mΩ Rds(on), D2PAK, avalanche rated, 5th gen technology

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Manufacturer Part：

IRF3415STRLPBF

Package：

D2PAK (TO-263AB)

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Description

Product Overview

The IRF3415STRLPBF is an N-Channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier) featuring 150V drain-source voltage, 43A continuous drain current, and 42 mΩ maximum on-resistance. Built with fifth-generation HEXFET technology, it offers fast switching, avalanche rating, and improved dv/dt capability in a D2PAK (TO-263AB) surface-mount package.

Key Specifications

  • Channel: N-Channel Enhancement Mode
  • V_DSS: 150V
  • V_GS: ±20V
  • I_D (Continuous): 43A (Tc=25°C)
  • R_DS(on): 42 mΩ max at V_GS=10V
  • V_GS(th): 2.0V ~ 4.0V
  • Gate Charge (Qg): 78 nC typical
  • C_iss: 2400 pF typical
  • Power Dissipation: 200W (Tc=25°C)
  • Avalanche Energy (EAS): 590 mJ
  • dv/dt: 5.0 V/ns
  • Operating Temperature: -55°C ~ +175°C
  • Package: D2PAK (TO-263AB), 3 pins, Surface Mount

Features

  • Fifth-generation HEXFET technology for extremely low R_DS(on) per silicon area
  • Avalanche rated for rugged environments
  • Improved dv/dt capability
  • Fast switching performance
  • Low gate charge (78 nC) simplifies drive requirements
  • D2PAK package for high-power surface-mount applications
  • 175°C maximum junction temperature

Applications

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor drives and inverters
  • Battery management systems
  • Automotive power switching

The IRF3415STRLPBF from Infineon Technologies is a fifth-generation HEXFET power MOSFET that achieves extremely low on-resistance per silicon area using advanced processing techniques. With 150V breakdown voltage and 42 mΩ maximum R_DS(on), it delivers 43A of continuous drain current in a surface-mount D2PAK package. The device is avalanche rated, capable of withstanding high-energy pulses in avalanche mode, and features improved dv/dt capability for robust operation in demanding switching applications. The STRLPBF suffix indicates D2PAK package, low-profile, tape and reel, and lead-free construction.

The IRF3415STRLPBF uses Infineon’s fifth-generation HEXFET vertical DMOS structure where thousands of parallel MOSFET cells are interconnected on a single die. Each cell contributes to the total current handling capability while the parallel combination yields the low 42 mΩ on-resistance. The vertical structure routes current vertically through the die from the top surface (source) to the bottom (drain), maximizing current density and thermal performance. The thick oxide gate structure provides reliable operation up to ±20V gate-source voltage. During avalanche events, the parasitic bipolar transistor is suppressed by optimized cell design, allowing the device to safely absorb 590 mJ of single-pulse avalanche energy. The body diode provides reverse conduction with a forward voltage of 1.3V typical at 22A.

Pin Name Function
1 Gate Gate terminal (control input)
2 Drain Drain terminal (connected to mounting tab)
3 Source Source terminal
Tab Drain Drain (heat dissipation tab)

The IRF3415STRLPBF is widely used as the primary switch in switch-mode power supplies, particularly in forward and half-bridge converter topologies. Its 150V rating makes it suitable for 48V input telecom power supplies and automotive 12V/24V systems with sufficient voltage margin. In motor drive applications, the low R_DS(on) minimizes conduction losses in H-bridge configurations. The avalanche rating provides inherent protection against inductive kickback from motor windings. For battery management systems, the device handles high current disconnect and pre-charge functions. The D2PAK package enables high-power designs without through-hole mounting, reducing assembly cost.

Model Manufacturer Key Difference
IRF3415LPBF Infineon Low-profile D2PAK variant
IRF3205STRLPBF Infineon 55V, 8mΩ, higher current
IPP065N15N3 Infineon 150V, 6.5mΩ, SuperJunction
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Quality is the core foundation of our long-term global cooperation. With over 20 years of experience in the electronic component industry, Materialparts has built a strict and standardized quality management system covering component sourcing, incoming inspection, full-batch testing, packaging and delivery. We are committed to delivering 100% genuine, high-reliability electronic components for industrial control, automotive electronics, consumer electronics and medical device industries, and fully safeguarding your production and R&D projects.

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Contact Information

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Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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