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IRF4905PBF

P-channel power MOSFET, -55 V, -74 A, 20 mohm, TO-220, HEXFET

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Manufacturer Part：

IRF4905PBF

Package：

TO-220AB (10.67 x 4.83 x 16.51 mm, through-hole)

Description

Product Overview

The IRF4905PBF from Infineon Technologies is a P-channel power MOSFET from the HEXFET family with -55 V drain-source voltage, -74 A continuous drain current, and 20 mohm on-resistance. Utilizing advanced process technology for ultra-low on-resistance, it is packaged in a through-hole TO-220AB package rated for 200 W power dissipation.

Key Specifications

Drain-Source Voltage (VDSS)	-55 V
On-Resistance (RDS(on))	20 mohm max @ VGS=-10 V
Continuous Drain Current	-74 A @ TC=25°C
Power Dissipation	200 W @ TC=25°C
Gate Threshold Voltage	-2.0 V to -4.0 V
Gate Charge (Qg)	180 nC max
Junction Temperature	-55°C to 175°C
Package	TO-220AB (through-hole)

Features

P-channel MOSFET for high-side switching
Ultra-low on-resistance: 20 mohm max
High current capability: -74 A continuous
Dynamic dv/dt rating for rugged switching
175°C operating junction temperature
Fully avalanche rated
Fast switching speed
Industry standard TO-220 package

Applications

High-side load switches and power distribution
DC motor drive and H-bridge circuits
Battery protection and management
Automotive and industrial power switching

Product Introduction:IRF4905PBF Product Introduction

The IRF4905PBF from Infineon Technologies is a P-channel power MOSFET from the fifth-generation HEXFET family, designed using advanced process technology to achieve extremely low on-resistance per silicon area. With a maximum RDS(on) of 20 mohm at VGS=-10 V and a continuous drain current rating of -74 A at TC=25°C, the device is well-suited for high-current switching applications where a P-channel MOSFET is required for high-side switching or H-bridge configurations. The -55 V drain-source voltage rating makes it compatible with 12 V, 24 V, and 48 V battery systems. The device is fully avalanche rated, meaning it can withstand repetitive avalanche energy events without damage, which is important in inductive load switching. The TO-220AB through-hole package provides excellent thermal performance with a junction-to-case thermal resistance of 0.75°C/W, supporting up to 200 W power dissipation with adequate heatsinking.

Working Principle:IRF4905PBF Working Principle

The IRF4905PBF operates as a voltage-controlled P-channel MOSFET with three operating regions: (1) In the cutoff region (VGS between 0 V and the threshold voltage), the channel is not formed, and only a small leakage current flows from source to drain. The device blocks voltage up to -55 V between drain and source. (2) In the linear (ohmic) region, when VGS exceeds the threshold voltage in the negative direction (typically -2 V to -4 V), an inversion layer forms in the P-type channel, connecting the source and drain regions. The on-resistance of 20 mohm at VGS=-10 V determines the conduction losses during steady-state operation. (3) During switching transitions, the gate charge (Qg=180 nC) must be supplied or removed through the gate driver. The Miller plateau region requires additional charge (Qgd=86 nC) as the drain voltage transitions, causing the Miller effect. The body diode inherent in the MOSFET structure provides a conduction path from source to drain when the drain voltage exceeds the source voltage, useful in H-bridge and motor drive applications.

Pin Description:IRF4905PBF Pin Definition and Functions

Pin No.	Pin Name	Function
1	Gate	Gate control input; apply negative voltage relative to source to turn on
2	Drain	Drain terminal; connects to load
3	Source	Source terminal; connects to supply voltage
Tab	Drain	Drain tab (connected to pin 2, provides thermal path)

Application Scenarios:In which products and applications isIRF4905PBF used

High-side load switches in battery-powered systems where P-channel MOSFETs simplify the gate drive circuit (no charge pump needed)
H-bridge motor drive circuits using complementary P/N-channel pairs for bidirectional DC motor control
Battery reverse polarity protection and battery management switches in 12 V and 24 V automotive systems
Power distribution switches in industrial equipment where the 200 W dissipation capability handles inrush and steady-state loads

Alternative Models:What chips are recommended as replacements for IRF4905PBF

Model	Brand	VDSS	ID	RDS(on)
IRF4905SPbF	Infineon	-55 V	-42 A	20 mohm
IRF4905LPbF	Infineon	-55 V	-42 A	20 mohm
FQP47P06	onsemi	-60 V	-47 A	26 mohm
IPP048N08N3 G	Infineon	-80 V	-60 A	4.8 mohm
STD95P4LLF6	ST	-40 V	-50 A	18 mohm