Product Overview
The IPG20N04S4L-08 from Infineon Technologies is a 40V N-channel OptiMOS power MOSFET in a SuperSO8 (5x6mm) package. With 2.0mΩ typical RDS(on) and 20A continuous drain current, it is optimized for high-efficiency synchronous rectification and DC-DC converter applications in server, telecom, and computing power supplies.
Key Specifications
| VDS | 40V |
| ID (TC=25°C) | 20 A |
| RDS(on) Typ @ VGS=10V | 2.0 mΩ |
| RDS(on) Max @ VGS=10V | 2.4 mΩ |
| VGS(th) Range | 1.0V to 2.2V (typ 1.6V) |
| Qg Total Gate Charge | 19 nC typ |
| Qgd (Miller Charge) | 4.5 nC typ |
| Power Dissipation | 50W (TC=25°C) |
| RθJC | 2.5°C/W |
| Body Diode VSD | 0.8V typ @ 20A |
| Operating Temperature | -55 to +175°C |
| Package | SuperSO8 (PG-DSO-8, 5x6mm) |
Features
- Ultra-low RDS(on): 2.0mΩ typical
- OptiMOS technology for highest efficiency
- Very low gate charge: 19nC typ
- Low Qgd/Qgs ratio for reduced switching losses
- Logic-level gate drive compatible
- SuperSO8 package with low parasitic inductance
- Source-down configuration (S4L variant)
- Qualified for industrial applications
Applications
- Synchronous rectification in server/telecom PSU
- DC-DC converter low-side switch (POL)
- Battery management and protection
- Motor drive half-bridge
- OR-ing and load switch