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HEF4066BT

Quad bilateral analog switch, 60Ω RON, 50MHz bandwidth, 3-15V supply in SOIC-14

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Manufacturer Part：

HEF4066BT

Package：

SOIC-14 (9.90 x 3.90 x 1.75 mm) SOT109-1

Brand：
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Description

Product Overview

The HEF4066BT from Nexperia is a quad bilateral analog switch in an SOIC-14 (9.9×3.9mm) package. Each of the four independent SPST switches features 60Ω typical on-resistance at 10V supply, 50MHz bandwidth, and low charge injection of 5pC. The device operates from 3V to 15V supply and is suitable for analog signal switching and multiplexing applications.

Key Specifications

Number of Switches 4 (Independent SPST)
On-Resistance (RON) 60Ω (Typ) @ VDD=10V
Supply Voltage Range 3V ~ 15V
Switch Bandwidth 50MHz (Typical)
Charge Injection 5pC (Typical)
Off-Leakage Current 50pA (Typ)
Package SOIC-14 (9.90 x 3.90mm)
Operating Temperature -40°C ~ +85°C

Features

  • Four independent SPST bilateral switches
  • Low on-resistance of 60Ω typical at 10V
  • Wide analog signal range: VSS to VDD
  • Low charge injection for minimal signal glitching
  • High off-isolation between switches
  • ESD protection exceeds 2000V HBM

Applications

  • Analog signal multiplexing and switching
  • Digital signal gating
  • Sample-and-hold circuits
  • Programmable gain amplifier networks
  • Audible/video signal routing

The HEF4066B is a quad bilateral analog switch using silicon-gate CMOS technology to achieve low on-resistance and low off-state leakage. Each of the four switches is independently controlled, and the bilateral nature means they can pass analog signals in either direction. The low charge injection of 5pC makes the device suitable for precision sample-and-hold circuits where switching transients must be minimized. The wide 3V to 15V supply range allows use in both 3.3V digital and ±7.5V analog systems.

Each SPST switch consists of an N-channel and P-channel MOSFET connected in parallel (transmission gate configuration). When the control input is high, both MOSFETs are turned on, creating a low-resistance bidirectional path between the switch terminals. The parallel N+P configuration ensures relatively constant on-resistance across the entire analog signal range from VSS to VDD. When the control is low, both MOSFETs are off, providing high impedance between terminals. The charge injection occurs from the gate-to-channel parasitic capacitance coupling when the control voltage transitions, injecting a small charge packet into the signal path.

Pin Name Function
1 1IN/OUT Switch 1 terminal A (bidirectional)
2 1OUT/IN Switch 1 terminal B (bidirectional)
3 2OUT/IN Switch 2 terminal B
4 2IN/OUT Switch 2 terminal A
5 2CTRL Switch 2 control input
6 3CTRL Switch 3 control input
7 VSS Ground (most negative supply)
8 3IN/OUT Switch 3 terminal A
9 3OUT/IN Switch 3 terminal B
10 4CTRL Switch 4 control input
11 4IN/OUT Switch 4 terminal A
12 4OUT/IN Switch 4 terminal B
13 1CTRL Switch 1 control input
14 VDD Positive supply voltage
  • Audio Signal Routing: Low 5pC charge injection eliminates audible clicks in audio path switching
  • Sample-and-Hold: 50MHz bandwidth and low leakage enable high-speed sampling with minimal droop
  • Programmable Gain Network: Four independent switches configure feedback resistor networks for discrete gain settings
  • Battery-Powered Instrumentation: Wide 3-15V supply accommodates single-cell Li-ion to ±7.5V analog rails
Model Manufacturer Key Difference
74HC4066D Nexperia HC version, lower RON (35Ω), 2-10V
DG411DY Maxim/ADI 35Ω RON, 15V supply, precision
ADG1611 ADI <1Ω RON, high voltage
TS5A3159 TI 1Ω RON, 5V, SPDT, tiny package
NC7SB3157P6X onsemi 5.5Ω, SPDT, SC-70-6
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Contact Information

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Tel / WhatsApp: +86 13760382860

Service & Packaging

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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