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BAV99

Dual Series Switching Diode, 70V 215mA, 6ns trr, SOT-23

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Manufacturer Part：

BAV99

Package：

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

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Description

Product Overview

The BAV99 from Nexperia is a 70V, 215mA dual switching diode in series configuration with 6ns reverse recovery time in a SOT-23-3 surface mount package.

Key Specifications

Type Dual Switching Diode (Series Pair)
Configuration 2 diodes in series
Peak Reverse Voltage 70 V
Forward Current 215 mA (per diode)
Forward Voltage 1.0 V (max) @ IF=10mA
Reverse Leakage 2.5 uA (max) @ VR=70V
Reverse Recovery Time 6 ns (max) @ IF=10mA
Junction Capacitance 1.5 pF (typical) @ VR=0V
Total Power Dissipation 250 mW
Package SOT-23-3
Operating Temperature -65C to +150C

Features

  • Two switching diodes in series configuration
  • 70V reverse voltage rating
  • 6ns fast reverse recovery
  • 1.5pF low junction capacitance
  • Industry-standard SOT-23-3 package

Applications

  • General-purpose switching
  • Signal gating and steering
  • ESD protection
  • Logic level clamping

The BAV99 from Nexperia is a dual switching diode array containing two diodes connected in series in a SOT-23-3 package. The 70V reverse voltage, 215mA forward current, and 6ns reverse recovery time make it suitable for general-purpose switching and signal steering applications. The 1.5pF junction capacitance and low 2.5uA reverse leakage minimize signal loading in high-frequency circuits. The series configuration provides double the reverse voltage blocking capability of a single diode and is commonly used in ESD protection, signal clamping, and voltage steering circuits. The BAV99 is one of the most widely used dual diode arrays in the electronics industry, with multiple manufacturer equivalents available.

The BAV99 contains two silicon planar epitaxial switching diodes connected in series within a single SOT-23-3 package. In the series configuration, pin 1 is the anode of diode 1, pin 3 is the common junction (cathode of diode 1 connected to anode of diode 2), and pin 2 is the cathode of diode 2. When forward biased, current flows through both diodes in series with a combined forward voltage of approximately 1.0V at 10mA. In the reverse direction, both diodes block, providing a combined reverse voltage rating of 70V (the individual diode rating, as reverse voltage is shared). The 6ns reverse recovery time is achieved through gold-doping of the silicon to create recombination centers that quickly sweep out stored minority carriers during turn-off. The 1.5pF junction capacitance at 0V bias is determined by the junction area and doping profile.

Pin Name Type Function
1 Anode 1 Terminal Anode of diode 1
2 Cathode 2 Terminal Cathode of diode 2
3 Common Terminal Cathode 1 / Anode 2 (series junction)
  • MCU GPIO ESD protection with series diode clamp to VCC and GND
  • RS-485 bus signal steering with 6ns switching speed
  • Digital logic level clamping with dual diodes to rails
  • Power supply reverse polarity protection with 70V blocking
Manufacturer Part Number Package Notes
onsemi BAV99LT1G SOT-23 Pin-compatible equivalent
Diodes Inc BAV99-7-F SOT-23 Pin-compatible equivalent
Infineon BAV99WE6433 SOT-23 Pin-compatible equivalent
Nexperia BAV99W,115 SOD-323 Same function, smaller package
Nexperia BAV199,215 SOT-23 70V low-leakage version (3nA)
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