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ESD7951ST5G

Bidirectional ESD diode, 5V Vrwm, 0.5pF, 12.9V clamp@1A, SOD-923, USB/antenna protection

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Manufacturer Part：

ESD7951ST5G

Package：

SOD-923 (1.0 x 0.6 x 0.5 mm, 0.65mm pitch)

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Description

The ESD7951ST5G from onsemi is a bidirectional ultra-low capacitance ESD protection diode in a 2-pin SOD-923 package (1.0 x 0.6 mm). It provides 5 V working voltage, 12.9 V clamping voltage at 1 A peak pulse current, 0.5 pF junction capacitance, and 1 µA maximum leakage current. The device protects against IEC 61000-4-2 ESD events. Its ultra-low capacitance makes it suitable for high-frequency signal lines such as USB 2.0 High-Speed and antenna paths. Operating temperature range is -55°C to +125°C. The T5G suffix denotes 8000-unit tape-and-reel packaging.

The ESD7951 from onsemi is a bidirectional ESD protection diode designed for ultra-low capacitance applications. The ESD7951ST5G is the SOD-923 tape-and-reel version with 8000 units per reel. With only 0.5 pF junction capacitance, the device is optimized for high-frequency signal paths where capacitive loading must be minimized — USB 2.0 High-Speed (480 Mbps), HDMI, RF antenna lines, and other impedance-controlled interfaces.

The bidirectional configuration protects signal lines that swing both above and below ground, making it suitable for AC-coupled and differential pair interfaces. The 5 V reverse working voltage (VRWM) covers 3.3 V and 5 V logic rails, while the 12.9 V clamping voltage at 1 A ensures the protected IC sees a limited voltage during an ESD strike.

The SOD-923 package occupies only 0.6 mm² of board area with a 0.5 mm profile, making it one of the smallest ESD protection packages available. This is critical for smartphones, tablets, and wearables where PCB real estate is extremely limited.

The ESD7951 is also available in an automotive-qualified version (SZESD7951ST5G) with AEC-Q101 compliance for automotive applications.

Note: The LCSC listing marks this part as discontinued, but onsemi’s ESD7951 product family remains in production. Verify current availability with authorized distributors before designing into new products.

**Bidirectional TVS Diode Structure:** The ESD7951 uses back-to-back Zener diodes in a single chip, providing symmetric clamping for both positive and negative ESD transients. In normal operation (voltage between -VRWM and +VRWM), both diodes are reverse-biased and draw only leakage current (1 µA max). When a positive transient exceeds VBR, the upper Zener diode avalanches and clamps the voltage. When a negative transient exceeds -VBR, the lower Zener diode conducts.

**Ultra-Low Capacitance Design:** The 0.5 pF capacitance is achieved through a specialized junction geometry that minimizes the depletion region area while maintaining adequate avalanche energy absorption. This is critical for USB 2.0 High-Speed where the specification limits total capacitive loading per D+/D- line.

**Clamping Mechanism:** During an IEC 61000-4-2 ESD event (8 kV contact, 15 kV air), the diode avalanches within sub-nanoseconds, diverting the ESD current away from the protected IC. The clamping voltage (12.9 V at 1 A) represents the voltage the protected device experiences during the event. Lower clamping voltage provides better protection.

Pin Name Type Description
1 I/O I/O ESD protection terminal; connect to protected signal line; bidirectional; 5V working voltage; 0.5pF capacitance to GND
2 GND G Ground reference; connect to PCB ground plane via shortest path; via-in-pad recommended for low inductance
Application Description
USB 2.0 High-Speed ESD Protection Protect D+/D- lines on USB 2.0 HS (480Mbps) ports; 0.5pF per line stays well under USB spec capacitance budget; place within 3mm of connector; pair with common-mode choke for full protection
RF Antenna Line Protection Protect antenna feed line from ESD at exposed connector; 0.5pF capacitance does not detune 2.4/5GHz impedance matching; bidirectional clamping suits AC-coupled RF paths
HDMI/DisplayPort Signal Protection Protect high-speed differential pairs; ultra-low capacitance preserves signal integrity; one diode per line placed near connector
Model Manufacturer Compatibility Key Difference
ESD7951SOT5G onsemi Package Variant Same die in SOT-523 package (1.6×0.8mm); larger footprint but easier assembly; use when SOD-923 is too small for manufacturing capability
PRTR5V0U2X Nexperia Functional Equivalent Bidirectional ESD diode; 5V Vrwm; 0.8pF; SOT-143B; slightly higher capacitance; includes additional rail clamp diode
TPD2E001DRLR TI Competitive Alternative 2-channel ESD protection; 0.5pF per channel; SOT-533; integrated 2-in-1 saves board space vs two discrete diodes
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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