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MMBT2222LT1G

NPN general-purpose transistor, 30V VCEO, 600mA IC, 250MHz fT, SOT-23 package

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Pieza del fabricante：

MMBT2222LT1G

Paquete：

SOT-23 (TO-236), 2.9 x 1.3 x 1.0mm

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Descripción

Productos

The MMBT2222LT1G is a general-purpose NPN bipolar junction transistor from onsemi in the SOT-23 (TO-236) surface-mount package. It is the SMD equivalent of the industry-standard 2N2222A through-hole transistor, offering 30V VCEO, 600mA continuous collector current, and 250MHz transition frequency. The -G suffix denotes the lead-free (Pb-Free) version shipped in tape-and-reel packaging of 3000 units.

Especificaciones

Tipo de transistor NPN
VCEO (Collector-Emitter Voltage) 30V
VCBO (Collector-Base Voltage) 60V
IC (Collector Current) 600mA continuous, 1100mA peak
hFE (DC Current Gain) 100 @ 150mA, 10V
VCE(sat) 0.4V @ 15mA/150mA; 1.6V @ 50mA/500mA
fT (Transition Frequency) 250MHz
Power Dissipation 225mW (FR-4 board)
Paquete SOT-23 (TO-236), 2.9 x 1.3mm
Temperatura de funcionamiento -55°C to +150°C

Características

  • Industry-standard 2N2222A in SMD form factor
  • High current gain (hFE up to 300)
  • 250MHz transition frequency for RF switching applications
  • Pb-Free package compliant with RoHS
  • Low saturation voltage (0.4V typical at 150mA)
  • Marking code: M1B

Aplicaciones

  • General-purpose low-power switching
  • Signal amplification in audio and RF stages
  • LED driver and relay driver circuits
  • Logic-level interfacing and level shifting
  • Temperature-compensated bias networks

The MMBT2222LT1G is a general-purpose NPN silicon transistor from onsemi housed in the compact SOT-23 surface-mount package. As the direct SMD equivalent of the legendary 2N2222A, it offers identical electrical characteristics in a package footprint 90% smaller than TO-92. The device features 30V collector-emitter voltage rating, 600mA continuous collector current, and a transition frequency of 250MHz, making it suitable for both switching and amplification. The hFE ranges from 35 to 300 depending on collector current, with a typical gain of 100 at 150mA. The low VCE(sat) of 0.4V at 150mA minimizes power loss in saturated switching applications. The Pb-free SOT-23 package is rated for 225mW dissipation on FR-4 PCB and operates from -55°C to +150°C. Marking code M1B identifies this device on the production line.

The MMBT2222LT1G operates as a current-controlled bipolar junction transistor. In the active region, a small base current (IB) controls a larger collector current (IC) through the current gain hFE (typically 100). For switching applications, the transistor is driven into saturation by ensuring IB > IC/hFE, at which point VCE drops to VCE(sat) (0.4V typical). The NPN structure consists of a thin P-type base sandwiched between N-type emitter and collector regions. Forward-biasing the base-emitter junction (VBE ≈ 0.7V) injects electrons from the emitter into the base, where most are swept across the reverse-biased collector-base junction to form the collector current. The 250MHz transition frequency (fT) is the frequency at which hFE drops to unity, determined by the base transit time and junction capacitances. In cutoff (VBE < 0.5V), both junctions are reverse-biased and only leakage current (ICBO = 10nA max) flows. The 600mA rating is limited by the bonding wire and package thermal characteristics, with a peak rating of 1100mA for short pulses.

Pin Nombre Tipo Función
1 Base Entrada Base terminal (controls collector current, VBE ≈ 0.7V when forward-biased)
2 Emisor Potencia Emitter terminal (connects to ground or emitter resistor)
3 Colector Potencia Collector terminal (connects to load or VCC through load resistor)
  • Low-power switching: Drives LEDs, relays, and small motors with microcontroller GPIO; base resistor calculated as RB = (VGPIO – 0.7V) / (IC / hFE)
  • Signal amplification: Common-emitter amplifier for audio and RF signals up to 100MHz; hFE of 100 provides 40dB voltage gain
  • Logic level shifting: Converts 3.3V logic to 5V logic or drives 12V loads from 5V control; open-collector configuration with pull-up resistor
  • Darlington pair: Two MMBT2222LT1G devices cascaded for ultra-high gain (hFE > 10,000) in ultra-sensitive detector circuits
Fabricante Número de pieza Paquete Notas
onsemi MMBT2222ALT1G SOT-23 40V VCEO version, higher voltage rating
Diodos Inc MMBT2222A-7-F SOT-23 Pin-compatible, Diodes Inc brand
Nexperia BC847C,215 SOT-23 45V NPN, higher hFE (420-800), Nexperia
Infineon BC847BWE6433 SOT-323 Smaller footprint, Infineon brand
onsemi MMBT3904LT1G SOT-23 40V 200mA general-purpose NPN, alternative choice
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