الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > الدوائر المتكاملة الخطية التناظرية > MMBT2222LT1G

MMBT2222LT1G

NPN general-purpose transistor, 30V VCEO, 600mA IC, 250MHz fT, SOT-23 package

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MMBT2222LT1G

الحزمة ： الحزمة

SOT-23 (TO-236), 2.9 x 1.3 x 1.0mm

الوصف

نظرة عامة على المنتج

The MMBT2222LT1G is a general-purpose NPN bipolar junction transistor from onsemi in the SOT-23 (TO-236) surface-mount package. It is the SMD equivalent of the industry-standard 2N2222A through-hole transistor, offering 30V VCEO, 600mA continuous collector current, and 250MHz transition frequency. The -G suffix denotes the lead-free (Pb-Free) version shipped in tape-and-reel packaging of 3000 units.

المواصفات الرئيسية

نوع الترانزستور	NPN
VCEO (جهد المُجمِّع-الباعث)	30V
VCBO (Collector-Base Voltage)	60V
IC (تيار المجمع)	600mA continuous, 1100mA peak
hFE (كسب التيار المستمر)	100 @ 150mA, 10V
VCE(sat)	0.4V @ 15mA/150mA; 1.6V @ 50mA/500mA
fT (Transition Frequency)	250MHz
تبديد الطاقة	225mW (FR-4 board)
الحزمة	SOT-23 (TO-236), 2.9 x 1.3mm
درجة حرارة التشغيل	-55 درجة مئوية إلى +150 درجة مئوية

الميزات

Industry-standard 2N2222A in SMD form factor
High current gain (hFE up to 300)
250MHz transition frequency for RF switching applications
Pb-Free package compliant with RoHS
Low saturation voltage (0.4V typical at 150mA)
Marking code: M1B

التطبيقات

General-purpose low-power switching
Signal amplification in audio and RF stages
LED driver and relay driver circuits
Logic-level interfacing and level shifting
Temperature-compensated bias networks

مقدمة المنتج:MMBT2222LT1G مقدمة المنتج

The MMBT2222LT1G is a general-purpose NPN silicon transistor from onsemi housed in the compact SOT-23 surface-mount package. As the direct SMD equivalent of the legendary 2N2222A, it offers identical electrical characteristics in a package footprint 90% smaller than TO-92. The device features 30V collector-emitter voltage rating, 600mA continuous collector current, and a transition frequency of 250MHz, making it suitable for both switching and amplification. The hFE ranges from 35 to 300 depending on collector current, with a typical gain of 100 at 150mA. The low VCE(sat) of 0.4V at 150mA minimizes power loss in saturated switching applications. The Pb-free SOT-23 package is rated for 225mW dissipation on FR-4 PCB and operates from -55°C to +150°C. Marking code M1B identifies this device on the production line.

مبدأ العمل:MMBT2222LT1G مبدأ العمل

The MMBT2222LT1G operates as a current-controlled bipolar junction transistor. In the active region, a small base current (IB) controls a larger collector current (IC) through the current gain hFE (typically 100). For switching applications, the transistor is driven into saturation by ensuring IB > IC/hFE, at which point VCE drops to VCE(sat) (0.4V typical). The NPN structure consists of a thin P-type base sandwiched between N-type emitter and collector regions. Forward-biasing the base-emitter junction (VBE ≈ 0.7V) injects electrons from the emitter into the base, where most are swept across the reverse-biased collector-base junction to form the collector current. The 250MHz transition frequency (fT) is the frequency at which hFE drops to unity, determined by the base transit time and junction capacitances. In cutoff (VBE < 0.5V), both junctions are reverse-biased and only leakage current (ICBO = 10nA max) flows. The 600mA rating is limited by the bonding wire and package thermal characteristics, with a peak rating of 1100mA for short pulses.

وصف الدبوس:MMBT2222LT1G تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	القاعدة	المدخلات	Base terminal (controls collector current, VBE ≈ 0.7V when forward-biased)
2	الباعث	الطاقة	Emitter terminal (connects to ground or emitter resistor)
3	جامع التحصيل	الطاقة	Collector terminal (connects to load or VCC through load resistor)

Application Scenarios:In which products and applications isMMBT2222LT1G مستعمل

Low-power switching: Drives LEDs, relays, and small motors with microcontroller GPIO; base resistor calculated as RB = (VGPIO – 0.7V) / (IC / hFE)
Signal amplification: Common-emitter amplifier for audio and RF signals up to 100MHz; hFE of 100 provides 40dB voltage gain
Logic level shifting: Converts 3.3V logic to 5V logic or drives 12V loads from 5V control; open-collector configuration with pull-up resistor
Darlington pair: Two MMBT2222LT1G devices cascaded for ultra-high gain (hFE > 10,000) in ultra-sensitive detector circuits

Alternative Models:What chips are recommended as replacements for MMBT2222LT1G

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
أونسمي	MMBT222222ALT1G	SOT-23	40V VCEO version, higher voltage rating
شركة ديودز	MMBT2222A-7-F	SOT-23	Pin-compatible, Diodes Inc brand
نيكسبيريا	BC847C,215	SOT-23	45V NPN, higher hFE (420-800), Nexperia
إنفينيون	BC847BWE6433	SOT-323	Smaller footprint, Infineon brand
أونسمي	MMBT3904LT1G	SOT-23	40V 200mA general-purpose NPN, alternative choice