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RB521S30T1G

30V 0.5A Schottky barrier diode, 0.37V VF, SOD-523, for polarity protection and rectification

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Pieza del fabricante：

RB521S30T1G

Paquete：

SOD-523 (SC-79, 1.6 x 0.8 x 0.6mm)

Marca：
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Descripción

Productos

The RB521S30T1G from onsemi is a 30V, 0.5A Schottky barrier diode in an ultra-small SOD-523 (SC-79) package. With a low forward voltage drop of 0.37V at 10mA and reverse leakage of just 0.5µA, it is designed for polarity protection, signal rectification, and power management in space-constrained portable electronics.

Especificaciones

Reverse Voltage (VR) 30V
Forward Current (IF) 0.5A
Forward Voltage (VF) 0.37V (typ) @IF=10mA; 0.55V (typ) @IF=100mA
Reverse Current (IR) 0.5µA (max) @VR=25V
Junction Capacitance 5pF (typ)
Paquete SOD-523 (SC-79)
Temperatura de funcionamiento -55°C to +125°C

Características

  • Low forward voltage drop of 0.37V for minimal power loss
  • Ultra-small SOD-523 package (1.6 x 0.8mm)
  • Low junction capacitance of 5pF for high-speed signals
  • Low reverse leakage of 0.5µA for battery-powered designs
  • AEC-Q101 qualified variants available

Aplicaciones

  • Polarity protection for battery-powered devices
  • Signal rectification and clamping
  • OR-ing diodes in redundant power paths
  • DC-DC converter freewheeling diode

The RB521S30T1G is a 30V, 0.5A Schottky barrier diode from onsemi in the ultra-compact SOD-523 (SC-79) package. Its low forward voltage drop (0.37V at 10mA) and low reverse leakage (0.5µA at 25V) make it ideal for power management in portable electronics where board space and power efficiency are at a premium. The 5pF junction capacitance preserves signal integrity in high-speed rectification and clamping applications.

The RB521S30T1G is a metal-semiconductor (Schottky) junction diode. Unlike conventional PN junction diodes, the Schottky junction is formed by a metal contact on a semiconductor, which eliminates minority carrier storage. This results in two key advantages: lower forward voltage drop (0.37V vs. 0.7V for silicon PN diodes) and faster reverse recovery (effectively zero recovery time). When forward-biased, current flows easily with minimal voltage loss. When reverse-biased, the junction blocks current with very low leakage (0.5µA), making it suitable for battery-conscious designs.

Pin Nombre Descripción
1 Cátodo Cathode terminal (band marked)
2 Ánodo Anode terminal
  • Battery polarity protection in portable electronics
  • Signal rectification and clamping in communication circuits
  • Power supply OR-ing for redundant battery paths
  • Freewheeling diode in low-power DC-DC converters
Modelo Fabricante VR VF Paquete
RB521S30T5G onsemi 30V 0.37V SOD-523
1PS76SB40 Nexperia 40V 0.38V SOD-523
SD103AWS onsemi 40V 0.55V SOD-323
BAS70-04 Infineon 70V 0.41V SOT-23
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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