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IRF9540PBF

P-Channel MOSFET, -100V, -19A, 0.200 Ohm, TO-220AB, high-side switch, avalanche rated

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Pieza del fabricante：

IRF9540PBF

Paquete：

TO-220AB (3-lead)

Marca：
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Descripción

Productos

The Infineon IRF9540PBF is a P-channel power MOSFET rated at -100 V drain-source voltage with -19 A continuous drain current and 0.200 Ohm on-resistance. Packaged in a TO-220AB through-hole package, it is designed for high-side switching, load disconnects, and complementary push-pull output stages in industrial and automotive applications.

Especificaciones

VDS -100 V
RDS(on) 0.200 Ohm @ VGS=-10V
ID (Continuous) -19 A @ TC=25°C
PD 150 W @ TC=25°C
Temperatura de funcionamiento -55°C to +175°C
Paquete TO-220AB

Características

  • 100 V P-channel MOSFET for high-side switching
  • Repetitive avalanche rated
  • 175°C maximum operating temperature
  • Dynamic dv/dt rating for ruggedness
  • Lead-free (PbF) RoHS-compliant
  • Easy paralleling due to positive temperature coefficient

Aplicaciones

  • High-side load switching
  • DC motor H-bridge drivers
  • Uninterruptible power supplies
  • Automotive battery disconnect switches
  • Audio amplifier output stages

The IRF9540PBF is a third-generation P-channel power MOSFET from Vishay Siliconix, offering a -100 V drain-source rating with -19 A continuous drain current and 0.200 Ohm on-resistance in a TO-220AB package. The device features repetitive avalanche rating and 175°C maximum junction temperature for rugged operation in demanding applications. Its positive temperature coefficient of RDS(on) facilitates easy paralleling for higher current capability. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels up to approximately 150 W, providing low thermal resistance at a low package cost.

As a P-channel enhancement-mode MOSFET, the IRF9540PBF conducts when a negative gate-to-source voltage (typically -10 V for full enhancement) is applied, creating an inversion layer in the N-type body region that forms a conductive channel between source and drain. Current flows from source to drain (conventional current direction) when the device is enhanced. The body-drain diode provides a natural freewheeling path for inductive loads. The device features dynamic dv/dt rating to withstand fast voltage transients at turn-off without spurious turn-on. Repetitive avalanche capability allows the device to absorb energy during inductive switching without external clamp circuits.

Pin Nombre Tipo Función
1 Puerta Entrada MOSFET gate control terminal
2 Drenaje Salida Drain terminal (connected to tab)
3 Fuente Potencia Source terminal
  • High-side load disconnect in battery-powered systems
  • H-bridge DC motor drive (complementary pair)
  • UPS battery charge/discharge switching
  • Audio power amplifier output stage
  • Automotive reverse polarity protection
Fabricante Número de pieza VDS RDS(on) Notas
Infineon IRF9540NPBF -100 V 0.117 Ohm Lower RDS(on) variant
ST IRF9540 -100 V 0.200 Ohm Direct equivalent
Vishay IRF5305PBF -55 V 0.080 Ohm Lower voltage, lower RDS(on)
onsemi FQP27P06 -60 V 0.045 Ohm Lower voltage class
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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