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AD549JHZ

Ultra-low Ibias electrometer op-amp, 60fA max, 1MHz GBW, TO-99 metal can, ±5V to ±18V

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Pieza del fabricante：

AD549JHZ

Paquete：

TO-99 (8-lead metal can)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The Analog Devices AD549JHZ is an ultra-low input bias current monolithic electrometer operational amplifier with maximum input bias current of 60 fA. Packaged in a TO-99 metal can, it provides 1 MHz gain-bandwidth product and is specifically designed for electrometer, photodiode, and high-impedance source applications requiring femtoampere-level input current.

Especificaciones

Corriente de polarización de entrada 60 fA max
Tensión de offset de entrada 0.5 mV max
GBW 1 MHz
Velocidad de giro 1.5 V/µs
Tensión de alimentación ±5 V to ±18 V
Paquete TO-99 (8-lead)

Características

  • Ultra-low input bias current: 60 fA max
  • Low input offset voltage: 0.5 mV max
  • Guard pin for input leakage protection
  • TO-99 metal can for low leakage
  • 1 MHz gain-bandwidth product
  • Operates from ±5 V to ±18 V supplies

Aplicaciones

  • Electrometer and picoammeter circuits
  • Photodiode and photomultiplier amplifiers
  • Ion-selective electrode measurements
  • Coulombmetry and charge amplifiers
  • High-impedance transducer interfaces

The AD549JHZ from Analog Devices is a monolithic electrometer operational amplifier featuring the lowest input bias current available in a standard op-amp package. With a maximum input bias current of only 60 fA at 25°C, the AD549 is specifically designed for applications requiring extremely high input impedance. The device uses a JFET input stage with proprietary dielectric isolation technology to achieve its ultra-low input current specifications. The TO-99 metal can package includes a guard pin that allows the user to protect the high-impedance input node from PCB leakage currents.

The AD549 achieves its ultra-low input bias current through a JFET input stage fabricated using dielectric isolation technology. The input JFETs are electrically isolated from the substrate by a layer of silicon dioxide, eliminating the parasitic leakage paths that exist in conventional junction-isolated devices. The guard ring structure, accessible via the guard pin, surrounds the input pins on the PCB and is driven at the same potential as the input, minimizing surface leakage currents. The internal compensation provides unity-gain stability, while the output stage is capable of driving 10 kOhm loads to within 2 V of the supply rails.

Pin Nombre Tipo Función
1 NULL Offset Adjust Offset null adjustment
2 -IN Entrada Inverting input
3 +IN Entrada Non-inverting input
4 V- Potencia Negative supply voltage
5 NULL Offset Adjust Offset null adjustment
6 OUTPUT Salida Amplifier output
7 V+ Potencia Positive supply voltage
8 GUARD Guard Guard ring connection for input protection
  • Picoammeter and electrometer front-end amplifiers
  • Photomultiplier tube (PMT) current measurement
  • pH and ion-selective electrode interfacing
  • Radiation detector charge amplifiers
  • High-impedance transducer signal conditioning
Fabricante Número de pieza Ibias Max Paquete Notas
ADI AD549KH 60 fA TO-99 Same family, tighter spec
TI LMC6001AIN 25 fA DIP-8 Lower Ibias alternative
ADI ADA4530-1 20 fA SOIC-8 Modern electrometer amp
Keystone 2N5458 N/A TO-92 Discrete JFET approach
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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