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IPW60R099P6

600V 47A CoolMOS P6, 99mOhm, 200nC Qg, TO-247, PFC/hard-switched, 10uJ Eoss

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Pieza del fabricante：

IPW60R099P6

Paquete：

TO-247 (21.00 x 15.70 x 5.20 mm, through-hole, isolated mount)

Marca：
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Compromiso de calidad
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Descripción

Productos

The IPW60R099P6 from Infineon is a 600V, 47A CoolMOS P6 N-channel power MOSFET in a TO-247 package. With 99mOhm RDS(on) and 200nC Qg, it targets high-efficiency PFC and hard-switched converter applications.

Especificaciones

VDSS 600 V
ID 47 A (at TC=25C)
RDS(on) 99 mOhm (max, VGS=10V)
Gate Charge (Qg) 200 nC (typical)
Eoss 10 uJ (typical)
Power Dissipation 311 W (at TC=25C)
Temperatura de funcionamiento -55C to +150C

Características

  • 600V CoolMOS P6 technology with 99mOhm RDS(on) for low conduction loss
  • 200nC gate charge with fast switching for hard-switched converters
  • 10uJ low Eoss reduces switching losses in ZVS and CrM PFC topologies
  • 311W power dissipation in TO-247 for high-power industrial applications
  • 100% avalanche tested for ruggedness in inductive environments
  • Improved body diode for bridge and PFC applications with low Qrr

Aplicaciones

  • PFC boost converters in server and telecom power supplies
  • Hard-switched half-bridge and full-bridge DC-DC converters
  • Solar inverter power stages and motor drives
  • UPS and welding machine power stages

The IPW60R099P6 from Infineon is a 600V, 47A N-channel CoolMOS P6 power MOSFET in a TO-247 through-hole package. The CoolMOS P6 technology represents Infineons 6th generation of superjunction MOSFETs, offering the best balance of RDS(on), gate charge, and energy stored in the output capacitance (Eoss). The 99mOhm maximum RDS(on) at VGS=10V provides low conduction loss for high-power PFC boost stages and hard-switched converters. The 200nC typical gate charge is optimized for fast switching in hard-switched applications, while the 10uJ Eoss is low enough to enable efficient critical-conduction-mode (CrM) PFC operation. The improved body diode with reduced reverse recovery charge (Qrr) and reverse recovery time (trr) makes the device suitable for bridge and PFC topologies where the body diode conducts during dead time. The TO-247 package provides 311W power dissipation rating at TC=25C with low thermal resistance for efficient heatsinking. The device is 100% avalanche tested, ensuring reliable operation during inductive switching transients.

The IPW60R099P6 uses Infineons CoolMOS P6 superjunction technology. (1) Superjunction Structure: Unlike conventional planar MOSFETs where the drift region must be thick and lightly doped to support high voltage (resulting in high RDS(on)), the superjunction structure uses alternating P and N columns in the drift region. The P-columns deplete the N-columns under reverse bias, supporting the 600V blocking voltage. During forward conduction, the N-columns can be heavily doped, dramatically reducing the drift region resistance. (2) RDS(on) vs Voltage: The superjunction structure breaks the RDS(on) proportional to VDS^2.5 relationship of conventional MOSFETs, achieving 99mOhm at 600V where a conventional device would be several Ohms. (3) Eoss Optimization: The P6 generation specifically optimizes the output capacitance (Coss) profile, reducing Eoss (energy stored in Coss) to 10uJ, critical for ZVS and CrM PFC applications. (4) Body Diode: The improved body diode with low Qrr and fast trr reduces losses in bridge and PFC topologies.

Pin Nombre Tipo Función
1 Puerta Entrada Gate drive input
2 Drenaje Salida Drain (tab, heatsink contact)
3 Fuente Salida Source terminal
  • PFC boost converters in server and telecom power supplies at 600V/47A
  • Hard-switched half-bridge and full-bridge DC-DC converters with low Eoss
  • Solar inverter power stages and motor drives with improved body diode
  • UPS and welding machine power stages in TO-247 with 311W dissipation
Fabricante Número de pieza Paquete Notas
Infineon IPW60R080P6 TO-247 80mOhm, lower RDS(on)
ST STW47N60M2 TO-247 600V, MDmesh M2
onsemi FCPF190N60E TO-247 600V, 190mOhm, SuperFET
Infineon IPW60R099CPA TO-247 CoolMOS C7, faster switch
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