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IRF3205PBF

55V 110A N-ch MOSFET, 8mOhm, TO-220AB, 146nC Qg, motor drive/switching regulator classic

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Pieza del fabricante：

IRF3205PBF

Paquete：

TO-220AB (15.60 x 10.40 x 4.60 mm, through-hole)

Marca：
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Descripción

Productos

The IRF3205PBF from Infineon (formerly IR) is a 55V, 110A N-channel power MOSFET in a TO-220AB package. With 8mOhm RDS(on) and 110A current rating, it is one of the most popular low-voltage MOSFETs for DC motor drives, switching regulators, and automotive applications.

Especificaciones

VDSS 55 V
ID 110 A (at TC=25C)
RDS(on) 8 mOhm (max, VGS=10V)
Gate Charge (Qg) 146 nC (typical)
Input Capacitance 3247 pF (typical)
Power Dissipation 200 W (at TC=25C)
Temperatura de funcionamiento -55C to +175C

Características

  • 55V/110A rating with 8mOhm RDS(on) for high-current low-voltage switching
  • One of the most widely used MOSFETs in motor drive and power supply design
  • 200W power dissipation in TO-220AB for heatsink mounting
  • 146nC gate charge supports switching up to hundreds of kHz
  • 100% avalanche tested for ruggedness in inductive applications
  • Extensive application literature and proven track record in production

Aplicaciones

  • DC motor H-bridge drive and speed control
  • Switching regulator output stage at 12V/24V
  • Automotive load switching and battery management
  • Synchronous rectification in high-current DC-DC converters

The IRF3205PBF from Infineon (formerly International Rectifier) is a 55V, 110A N-channel power MOSFET in a TO-220AB through-hole package. With 8mOhm maximum RDS(on) at VGS=10V, it is one of the lowest resistance MOSFETs available in the classic TO-220 package, making it a perennial favorite for DC motor drives, high-current switching regulators, and automotive power switching. The 110A continuous drain current rating (at TC=25C) and 200W power dissipation rating make it suitable for applications requiring tens of amperes with minimal conduction loss. The 55V drain-source rating supports operation from 12V and 24V supply rails with adequate margin for inductive spikes. Since its introduction, the IRF3205 has become one of the most widely used power MOSFETs in the industry, with extensive application literature, reference designs, and a proven track record in millions of production units. The 146nC gate charge supports switching frequencies up to hundreds of kHz with appropriate gate drive circuitry. The device is 100% avalanche tested, ensuring reliable operation during inductive switching transients in motor drive and relay driving applications.

The IRF3205PBF is a vertical N-channel power MOSFET using the HEXFET cell structure. (1) Structure: The device uses a vertical structure with thousands of hexagonal MOSFET cells connected in parallel. The N-channel is formed by applying a positive gate voltage above the threshold (2-4V typical), creating an inversion layer that connects the source N+ region to the N- drift region. Current flows vertically from drain (bottom) through the channel and drift region to source (top). (2) Low RDS(on): The very large die area and high cell density achieve the 8mOhm RDS(on). The N- drift region is relatively thin and moderately doped since only 55V blocking is required, minimizing drift resistance. (3) Switching: The 146nC gate charge must be supplied and removed for each switching cycle. The switching speed is determined by the gate drive current capability. For motor drive applications at 10-20kHz, a gate driver capable of 1-2A peak current provides adequate switching speed. (4) Avalanche: During inductive turn-off, the drain voltage may spike above the rated VDS. The avalanche rating allows the device to absorb a limited amount of energy during these events without damage.

Pin Nombre Tipo Función
1 Puerta Entrada Gate drive input
2 Drenaje Salida Drain (tab, heatsink contact)
3 Fuente Salida Source terminal
  • DC motor H-bridge drive and speed control at 55V/110A
  • Switching regulator output stage at 12V/24V with 8mOhm conduction loss
  • Automotive load switching and battery management in TO-220AB
  • Synchronous rectification in high-current DC-DC converters with proven reliability
Fabricante Número de pieza Paquete Notas
Infineon IRF3205LPBF D2PAK SMD version, same die
Infineon IRLZ44NPBF TO-220AB 55V, logic-level gate, 22mOhm
onsemi FDB8832 TO-263 30V, 80A, 3.2mOhm, lower V
Vishay IRLR7843TRPBF D2PAK 30V, 100A, 2.5mOhm, SMD
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