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TLC27L4IDR

Quad LinCMOS op-amp, 10uA/ch, 85kHz, SOIC-14, input to V-, 10mV Vos, 60pA Ibias

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Pieza del fabricante：

TLC27L4IDR

Paquete：

SOIC-14 (8.65 x 6.00 x 1.50 mm, D package)

Marca：
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Descripción

Productos

The TLC27L4IDR from Texas Instruments is a quad LinCMOS precision operational amplifier in a SOIC-14 package. With 10uA per channel supply current and 85kHz GBW, it provides ultra-low power operation with input common-mode range extending below the negative rail.

Especificaciones

Supply Current 10 uA per channel typical
Gain Bandwidth 85 kHz
Velocidad de giro 0.03 V/us
Tensión de offset de entrada 10 mV max at 25C
Input Offset Drift 0.1 uV/month typical
Corriente de polarización de entrada 60 pA max
CMRR 94 dB typical
Tensión de alimentación 4 V to 16 V (industrial temp)
Temperatura de funcionamiento -40C to +85C

Características

  • Quad CMOS op-amp with 10uA/ch ultra-low supply current for battery-powered designs
  • Input common-mode range extends below negative rail for single-supply operation
  • 0.1uV/month offset voltage drift with LinCMOS silicon-gate technology
  • 10^12 Ohm high input impedance with 60pA max input bias current
  • Output voltage range includes negative rail for true single-supply operation
  • 94dB CMRR and internal ESD protection circuitry

Aplicaciones

  • Battery-powered instrumentation with 10uA/ch ultra-low power consumption
  • Single-supply sensor conditioning with input below negative rail capability
  • Low-frequency signal processing at 85kHz GBW with high CMRR
  • Portable medical and industrial monitoring with 0.1uV/month stability

The TLC27L4IDR from Texas Instruments is a quad LinCMOS precision operational amplifier in a SOIC-14 package. The TLC27Lx family combines various input offset voltage grades, low offset voltage drift, high input impedance, ultra-low power consumption, and high gain in a single device. The L-suffix (TLC27L4) provides 10mV max offset voltage at the lowest power consumption of 10uA per channel typical at 5V supply, resulting in total quiescent power of only 195uW for all four amplifiers. The LinCMOS silicon-gate process provides offset voltage stability far exceeding that available with conventional metal-gate CMOS processes, with typical drift of only 0.1uV/month including the first 30 days. The input common-mode voltage range extends 0.3V below the negative supply rail, enabling true single-supply operation with ground-referenced input signals. The output voltage range includes the negative rail, allowing the output to swing to ground in single-supply configurations. The 10^12 Ohm typical input impedance and 60pA max input bias current make the device ideal for high-impedance sensor interfaces. The 94dB typical CMRR ensures excellent common-mode rejection in differential measurement applications.

The TLC27L4IDR uses TI LinCMOS silicon-gate CMOS technology optimized for precision and low power. (1) CMOS Input Stage: The input differential pair uses P-channel MOSFETs, providing the ultra-low 60pA input bias current and 10^12 Ohm input impedance. The silicon-gate process provides better threshold voltage matching and stability compared to metal-gate CMOS, achieving the 0.1uV/month offset drift. (2) Input Below V-: The input stage is designed with a bias network that allows the input common-mode voltage to extend approximately 0.3V below the negative supply rail. This is achieved by an internal current source that biases the input pair even when the common-mode voltage is at or slightly below V-. (3) Output to V-: The output stage uses a P-channel MOSFET pull-down that can pull the output to within a few millivolts of the negative rail when sinking current, enabling true single-supply operation. (4) Low Power: The internal bias network is set to provide only 10uA per channel. This limits the gain-bandwidth to 85kHz and slew rate to 0.03V/us, but the ultra-low power consumption makes the device ideal for battery-powered applications where bandwidth requirements are modest. (5) Internal Compensation: Each amplifier is internally compensated for unity-gain stability.

Pin Nombre Tipo Función
1 1OUT Salida Amplifier 1 output
2 1IN- Entrada Amplifier 1 inverting input
3 1IN+ Entrada Amplifier 1 non-inverting input
4 VDD Potencia Positive supply (4-16V)
5 2IN+ Entrada Amplifier 2 non-inverting input
6 2IN- Entrada Amplifier 2 inverting input
7 2OUT Salida Amplifier 2 output
8 3OUT Salida Amplifier 3 output
9 3IN- Entrada Amplifier 3 inverting input
10 3IN+ Entrada Amplifier 3 non-inverting input
11 VSS/GND Potencia Negative supply or ground
12 4IN+ Entrada Amplifier 4 non-inverting input
13 4IN- Entrada Amplifier 4 inverting input
14 4OUT Salida Amplifier 4 output
  • Battery-powered instrumentation with 10uA/ch ultra-low power at 195uW total
  • Single-supply sensor conditioning with input below negative rail capability
  • Low-frequency signal processing at 85kHz GBW with 94dB CMRR
  • Portable medical and industrial monitoring with 0.1uV/month offset stability
Fabricante Número de pieza Paquete Notas
TI TLC27M4IDR SOIC-14 Medium power, 150uA/ch
TI TLC27H4IDR SOIC-14 High power, 1mA/ch, 2.2MHz
TI TLC27L9IDR SOIC-14 900uV offset, precision grade
TI TLV27L4IDR SOIC-14 3V version, similar
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