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IPW60R099P6

600V 47A CoolMOS P6, 99mOhm, 200nC Qg, TO-247, PFC/hard-switched, 10uJ Eoss

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IPW60R099P6

الحزمة ： الحزمة

TO-247 (21.00 x 15.70 x 5.20 mm, through-hole, isolated mount)

العلامة التجارية ： العلامة التجارية
فئات المنتجات:：فئات المنتجات
الالتزام بالجودة
الشحن والدفع
الخدمة والتغليف
دليل المنتج
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الوصف

نظرة عامة على المنتج

The IPW60R099P6 from Infineon is a 600V, 47A CoolMOS P6 N-channel power MOSFET in a TO-247 package. With 99mOhm RDS(on) and 200nC Qg, it targets high-efficiency PFC and hard-switched converter applications.

المواصفات الرئيسية

VDSS 600 V
بطاقة الهوية 47 A (at TC=25C)
RDS(تشغيل) 99 mOhm (max, VGS=10V)
Gate Charge (Qg) 200 nC (typical)
Eoss 10 uJ (typical)
تبديد الطاقة 311 W (at TC=25C)
درجة حرارة التشغيل -55C to +150C

الميزات

  • 600V CoolMOS P6 technology with 99mOhm RDS(on) for low conduction loss
  • 200nC gate charge with fast switching for hard-switched converters
  • 10uJ low Eoss reduces switching losses in ZVS and CrM PFC topologies
  • 311W power dissipation in TO-247 for high-power industrial applications
  • 100% avalanche tested for ruggedness in inductive environments
  • Improved body diode for bridge and PFC applications with low Qrr

التطبيقات

  • PFC boost converters in server and telecom power supplies
  • Hard-switched half-bridge and full-bridge DC-DC converters
  • Solar inverter power stages and motor drives
  • UPS and welding machine power stages

The IPW60R099P6 from Infineon is a 600V, 47A N-channel CoolMOS P6 power MOSFET in a TO-247 through-hole package. The CoolMOS P6 technology represents Infineons 6th generation of superjunction MOSFETs, offering the best balance of RDS(on), gate charge, and energy stored in the output capacitance (Eoss). The 99mOhm maximum RDS(on) at VGS=10V provides low conduction loss for high-power PFC boost stages and hard-switched converters. The 200nC typical gate charge is optimized for fast switching in hard-switched applications, while the 10uJ Eoss is low enough to enable efficient critical-conduction-mode (CrM) PFC operation. The improved body diode with reduced reverse recovery charge (Qrr) and reverse recovery time (trr) makes the device suitable for bridge and PFC topologies where the body diode conducts during dead time. The TO-247 package provides 311W power dissipation rating at TC=25C with low thermal resistance for efficient heatsinking. The device is 100% avalanche tested, ensuring reliable operation during inductive switching transients.

The IPW60R099P6 uses Infineons CoolMOS P6 superjunction technology. (1) Superjunction Structure: Unlike conventional planar MOSFETs where the drift region must be thick and lightly doped to support high voltage (resulting in high RDS(on)), the superjunction structure uses alternating P and N columns in the drift region. The P-columns deplete the N-columns under reverse bias, supporting the 600V blocking voltage. During forward conduction, the N-columns can be heavily doped, dramatically reducing the drift region resistance. (2) RDS(on) vs Voltage: The superjunction structure breaks the RDS(on) proportional to VDS^2.5 relationship of conventional MOSFETs, achieving 99mOhm at 600V where a conventional device would be several Ohms. (3) Eoss Optimization: The P6 generation specifically optimizes the output capacitance (Coss) profile, reducing Eoss (energy stored in Coss) to 10uJ, critical for ZVS and CrM PFC applications. (4) Body Diode: The improved body diode with low Qrr and fast trr reduces losses in bridge and PFC topologies.

دبوس الاسم النوع الوظيفة
1 البوابة المدخلات Gate drive input
2 الصرف المخرجات Drain (tab, heatsink contact)
3 المصدر المخرجات Source terminal
  • PFC boost converters in server and telecom power supplies at 600V/47A
  • Hard-switched half-bridge and full-bridge DC-DC converters with low Eoss
  • Solar inverter power stages and motor drives with improved body diode
  • UPS and welding machine power stages in TO-247 with 311W dissipation
الشركة المصنعة رقم الجزء الحزمة الملاحظات
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إنفينيون IPW60R099CPA TO-247 CoolMOS C7, faster switch
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العلامة التجارية:

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ضمان الجودة

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

 

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Contact Information

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الخدمة والتغليف

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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We specialize in a full range of passive and active electronic components, including SMD resistors, power resistors, connectors, aviation connectors, LED beads, flexible circuit boards, printed circuit boards, and integrated circuits. Our professional team provides BOM list consolidation, component matching, and alternative model recommendation services. We support sample orders, small-batch trial production, and mass production orders with flexible MOQs to meet diverse procurement needs.

2. Genuine Product Guarantee & Full-process Quality Inspection

All products are sourced from official authorized channels and are 100% original genuine parts. Every batch of goods undergoes strict full-process quality inspection before delivery, with complete batch records and traceability documents provided. Our products comply with AEC-Q standards for automotive electronics and high-reliability specifications for medical devices. We eliminate counterfeits, refurbished parts and defective products from the source to secure your project production.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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