نظرة عامة على المنتج
The IPG20N04S4L11ATMA1 from Infineon is a 40V, 20A OptiMOS N-channel power MOSFET in a PG-TSDSON-8 (SuperSO8) package. With 1.1mOhm RDS(on) and 40V rating, it targets synchronous rectification and motor drive in high-current applications.
المواصفات الرئيسية
| VDSS | 40 V |
| بطاقة الهوية | 20 A (at TC=25C) |
| RDS(تشغيل) | 1.1 mOhm (max, VGS=10V) |
| Gate Charge (Qg) | 25 nC (typical) |
| الحزمة | PG-TSDSON-8 (SuperSO8) |
| درجة حرارة التشغيل | -55C to +175C |
الميزات
- 1.1mOhm ultra-low RDS(on) for minimal conduction loss at 20A
- 40V rating for 12V/24V automotive and industrial bus applications
- SuperSO8 package with exposed drain for superior thermal performance
- 25nC low gate charge for efficient high-frequency switching
- 175C maximum junction temperature for demanding environments
- 100% avalanche tested for ruggedness in inductive applications
التطبيقات
- Synchronous rectification in DC-DC converters
- Motor drive H-bridge and half-bridge stages
- Battery protection and load switching in automotive
- OR-ing and reverse polarity protection circuits