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FQD8N80TM

800V 3.5A N-ch MOSFET, 3.6Ohm, DPAK, QFET planar DMOS, 19nC Qg, 100% avalanche

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Pieza del fabricante：

FQD8N80TM

Paquete：

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The FQD8N80TM from onsemi is an 800V, 3.5A N-channel QFET power MOSFET in a DPAK (TO-252) package. Using planar stripe DMOS technology, it provides low on-resistance and superior switching performance for SMPS, PFC, and motor drive applications.

Especificaciones

VDS 800 V
ID (continuo) 3.5 A at Tc=25C
RDS(on) Max 3.6 Ohm at VGS=10V
Gate Charge 19 nC typical at 10V
Input Capacitance 680 pF typical
Avalanche Energy 460 mJ single pulse
Power Dissipation 3.13W (Ta), 100W (Tc)
Temperatura de funcionamiento -55C to +150C

Características

  • 800V/3.5A N-channel MOSFET in DPAK surface-mount package
  • 3.6 Ohm max RDS(on) at 10V gate drive for low conduction losses
  • 19nC typical gate charge for fast and efficient switching
  • Planar stripe DMOS technology with 100% avalanche tested
  • Low Crss of 8.6pF typical for reduced Miller effect
  • Suitable for off-line SMPS, PFC pre-regulators, and motor drives

Aplicaciones

  • Switch-mode power supply primary-side switching at 800V
  • Active power factor correction (PFC) boost converter

The FQD8N80TM from onsemi is an 800V, 3.5A N-channel enhancement mode power MOSFET in a DPAK (TO-252) surface-mount package. The device is produced using onsemi proprietary planar stripe and DMOS technology, which has been especially tailored to reduce on-state resistance and provide superior switching performance with high avalanche energy strength. The 3.6 Ohm maximum RDS(on) at VGS=10V and 19nC typical total gate charge provide an excellent balance between conduction loss and switching loss for moderate-frequency power conversion applications. The low Crss of 8.6pF typical minimizes the Miller effect, reducing the risk of parasitic turn-on during high dV/dt switching transitions. The device is 100% avalanche tested, ensuring reliable operation under inductive load conditions where voltage spikes may exceed the rated VDS. The DPAK package provides surface-mount convenience with adequate thermal performance through the exposed drain tab, supporting up to 100W power dissipation when properly heatsinked. The FQD8N80TM is well-suited for off-line switch-mode power supplies, active PFC boost converters, and other high-voltage switching applications.

The FQD8N80TM is a vertical DMOS N-channel enhancement mode power MOSFET. (1) DMOS Structure: The planar stripe DMOS technology uses vertical current flow from source to drain through thousands of parallel MOSFET cells. Each cell has a gate oxide over the P-body region. When VGS exceeds the threshold (3.0-5.0V), an N-type inversion layer forms at the oxide-semiconductor interface, creating a conductive channel from source to drain. (2) Voltage Blocking: When VGS=0V, the P-body/N-drift junction blocks current flow. The 800V rating is achieved through a lightly-doped N-drift region that supports the high electric field during the off-state. (3) On-State Conduction: When the channel is formed, current flows from source through the channel, across the JFET region between adjacent P-bodies, through the N-drift region, and out the drain. The RDS(on) of 3.6 Ohm max includes the channel resistance, JFET resistance, drift region resistance, and substrate resistance. (4) Avalanche: When the drain voltage exceeds the breakdown voltage, the device enters avalanche mode. The current flows through the P-body/N-drift junction in breakdown. The 460mJ single-pulse avalanche energy rating indicates the device can absorb significant energy during inductive turn-off transients.

Pin Nombre Función
1 Puerta Gate terminal (input)
2 Drenaje Drain terminal (exposed tab)
3 Fuente Source terminal
  • Switch-mode power supply primary-side switching at 800V in DPAK
  • Active power factor correction (PFC) boost converter at 3.5A
Fabricante Número de pieza Paquete Notas
onsemi FQB8N80TM TO-220 Through-hole version
onsemi FQD4N80TM DPAK 1.9A, lower current
Infineon SPW11N80C3 TO-247 11A, CoolMOS
onsemi FCPF850N80Z TO-220FP 8A, SuperFET II
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