FQD8N80TM


800V 3.5A N-ch MOSFET, 3.6Ohm, DPAK, QFET planar DMOS, 19nC Qg, 100% avalanche

11648

المخزون الفعال

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جزء الشركة المصنعة : جزء الشركة المصنعة

FQD8N80TM

الحزمة : الحزمة

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

العلامة التجارية : العلامة التجارية
فئات المنتجات::فئات المنتجات
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الوصف

نظرة عامة على المنتج

The FQD8N80TM from onsemi is an 800V, 3.5A N-channel QFET power MOSFET in a DPAK (TO-252) package. Using planar stripe DMOS technology, it provides low on-resistance and superior switching performance for SMPS, PFC, and motor drive applications.

المواصفات الرئيسية

VDS 800 V
الهوية (مستمر) 3.5 A at Tc=25C
RDS(on) Max 3.6 Ohm at VGS=10V
Gate Charge 19 nC typical at 10V
Input Capacitance 680 pF typical
Avalanche Energy 460 mJ single pulse
تبديد الطاقة 3.13W (Ta), 100W (Tc)
درجة حرارة التشغيل -55C to +150C

الميزات

  • 800V/3.5A N-channel MOSFET in DPAK surface-mount package
  • 3.6 Ohm max RDS(on) at 10V gate drive for low conduction losses
  • 19nC typical gate charge for fast and efficient switching
  • Planar stripe DMOS technology with 100% avalanche tested
  • Low Crss of 8.6pF typical for reduced Miller effect
  • Suitable for off-line SMPS, PFC pre-regulators, and motor drives

التطبيقات

  • Switch-mode power supply primary-side switching at 800V
  • Active power factor correction (PFC) boost converter

The FQD8N80TM from onsemi is an 800V, 3.5A N-channel enhancement mode power MOSFET in a DPAK (TO-252) surface-mount package. The device is produced using onsemi proprietary planar stripe and DMOS technology, which has been especially tailored to reduce on-state resistance and provide superior switching performance with high avalanche energy strength. The 3.6 Ohm maximum RDS(on) at VGS=10V and 19nC typical total gate charge provide an excellent balance between conduction loss and switching loss for moderate-frequency power conversion applications. The low Crss of 8.6pF typical minimizes the Miller effect, reducing the risk of parasitic turn-on during high dV/dt switching transitions. The device is 100% avalanche tested, ensuring reliable operation under inductive load conditions where voltage spikes may exceed the rated VDS. The DPAK package provides surface-mount convenience with adequate thermal performance through the exposed drain tab, supporting up to 100W power dissipation when properly heatsinked. The FQD8N80TM is well-suited for off-line switch-mode power supplies, active PFC boost converters, and other high-voltage switching applications.

The FQD8N80TM is a vertical DMOS N-channel enhancement mode power MOSFET. (1) DMOS Structure: The planar stripe DMOS technology uses vertical current flow from source to drain through thousands of parallel MOSFET cells. Each cell has a gate oxide over the P-body region. When VGS exceeds the threshold (3.0-5.0V), an N-type inversion layer forms at the oxide-semiconductor interface, creating a conductive channel from source to drain. (2) Voltage Blocking: When VGS=0V, the P-body/N-drift junction blocks current flow. The 800V rating is achieved through a lightly-doped N-drift region that supports the high electric field during the off-state. (3) On-State Conduction: When the channel is formed, current flows from source through the channel, across the JFET region between adjacent P-bodies, through the N-drift region, and out the drain. The RDS(on) of 3.6 Ohm max includes the channel resistance, JFET resistance, drift region resistance, and substrate resistance. (4) Avalanche: When the drain voltage exceeds the breakdown voltage, the device enters avalanche mode. The current flows through the P-body/N-drift junction in breakdown. The 460mJ single-pulse avalanche energy rating indicates the device can absorb significant energy during inductive turn-off transients.

دبوس الاسم الوظيفة
1 البوابة Gate terminal (input)
2 الصرف Drain terminal (exposed tab)
3 المصدر Source terminal
  • Switch-mode power supply primary-side switching at 800V in DPAK
  • Active power factor correction (PFC) boost converter at 3.5A
الشركة المصنعة رقم الجزء الحزمة الملاحظات
أونسمي FQB8N80TM TO-220 Through-hole version
أونسمي FQD4N80TM DPAK 1.9A, lower current
إنفينيون SPW11N80C3 TO-247 11A, CoolMOS
أونسمي FCPF850N80Z TO-220FP 8A, SuperFET II
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ضمان الجودة

Quality is the core foundation of our long-term global cooperation. With over 20 years of experience in the electronic component industry, Materialparts has built a strict and standardized quality management system covering component sourcing, incoming inspection, full-batch testing, packaging and delivery. We are committed to delivering 100% genuine, high-reliability electronic components for industrial control, automotive electronics, consumer electronics and medical device industries, and fully safeguarding your production and R&D projects.

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

 

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Contact Information

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Tel / WhatsApp: +86 13760382860

الخدمة والتغليف

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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We specialize in a full range of passive and active electronic components, including SMD resistors, power resistors, connectors, aviation connectors, LED beads, flexible circuit boards, printed circuit boards, and integrated circuits. Our professional team provides BOM list consolidation, component matching, and alternative model recommendation services. We support sample orders, small-batch trial production, and mass production orders with flexible MOQs to meet diverse procurement needs.

2. Genuine Product Guarantee & Full-process Quality Inspection

All products are sourced from official authorized channels and are 100% original genuine parts. Every batch of goods undergoes strict full-process quality inspection before delivery, with complete batch records and traceability documents provided. Our products comply with AEC-Q standards for automotive electronics and high-reliability specifications for medical devices. We eliminate counterfeits, refurbished parts and defective products from the source to secure your project production.

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We cooperate with mainstream international logistics providers including DHL, FedEx, UPS and TNT to achieve fast global delivery. We can provide complete export documents such as customs declaration files, commercial invoices and packing lists to ensure smooth customs clearance for international shipments. Local pickup is also available for customers in Shenzhen, China.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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