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FQD11N06TM

60V N-ch MOSFET, 50mR RDS(on), 11A, DPAK TO-252

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Pieza del fabricante：

FQD11N06TM

Paquete：

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

Marca：
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Descripción

Productos

The FQD11N06TM from onsemi is an N-channel 60V/11A MOSFET with 0.05 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, designed for low-voltage high-current switching.

Especificaciones

Tipo N-Channel Enhancement MOSFET
VDSS 60 V
ID 11 A (continuous @ TC=25°C)
RDS(on) 0.05 Ohm max @ VGS=10V
RDS(on) 0.07 Ohm max @ VGS=5V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 20 nC typical
Power Dissipation 50 W @ TC=25°C
Temperatura de funcionamiento -55°C to +150°C
Paquete DPAK / TO-252-3

Características

  • 60V N-ch MOSFET with ultra-low 50mOhm RDS(on) at 10V in DPAK
  • 11A continuous current with logic-level gate drive capability

Aplicaciones

  • DC-DC converter synchronous rectifier and motor drive

The FQD11N06TM from onsemi is a 60V N-channel enhancement-mode MOSFET featuring ultra-low on-resistance of 50mOhm maximum at VGS=10V in the compact DPAK surface-mount package. The device is rated for 11A continuous drain current, making it suitable for low-voltage high-current switching applications such as DC-DC converter synchronous rectification, motor drive, and battery protection. The 70mOhm RDS(on) at VGS=5V enables efficient operation from 5V logic gate drives. The 20nC total gate charge provides a good figure of merit (RDS(on) x Qg = 1.0 Ohm*nC) for the 60V rating. The DPAK package provides 50W power dissipation at TC=25°C with the drain tab for efficient thermal coupling to the PCB or heatsink.

The FQD11N06TM is a low-voltage N-channel enhancement-mode vertical DMOS power MOSFET optimized for low on-resistance. (1) Low RDS(on): At 60V breakdown, the drift region can be very short and heavily doped, resulting in a very low specific on-resistance. The trench gate or dense planar cell geometry maximizes the channel width per unit die area, further reducing RDS(on). (2) Synchronous Rectification: In a buck converter, the FQD11N06TM replaces the Schottky diode as the low-side switch. When the high-side MOSFET turns off, the body diode of the FQD11N06TM conducts briefly before the gate drive turns on the channel. Once the channel is on, the 50mOhm RDS(on) replaces the diode forward voltage (typically 0.3-0.5V for Schottky), significantly reducing conduction losses at high current. At 11A, the conduction loss through 50mOhm is only 6W compared to 3.3-5.5W through a Schottky diode. (3) Logic-Level Drive: The 70mOhm RDS(on) at VGS=5V is only 40% higher than at VGS=10V, making the device suitable for 5V gate drive systems.

Pin Nombre Función
1 G Puerta
2 D Drain (connected to tab)
3 S Fuente
Pestaña D Drain (thermal/electrical)
  • DC-DC converter synchronous rectifier at 50mOhm, 11A
  • Low-voltage motor drive and battery protection switching
Fabricante Número de pieza Paquete Notas
onsemi FQD12N20TM DPAK 200V, 6A, higher voltage
Infineon IPD034N06N G DPAK 60V, 34mOhm, lower Ron
Vishay SI4486CDY-T1-E3 SO-8 30V, 16mOhm, dual
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