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FQD2N40TM

400V N-ch MOSFET, 5.0R RDS(on), 0.9A, DPAK TO-252

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Pieza del fabricante：

FQD2N40TM

Paquete：

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

Marca：
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Descripción

Productos

The FQD2N40TM from onsemi is an N-channel 400V/0.9A MOSFET with 5.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package for low-power offline SMPS applications.

Especificaciones

Tipo N-Channel Enhancement MOSFET
VDSS 400 V
ID 0.9 A (continuous @ TC=25°C)
RDS(on) 5.0 Ohm max @ VGS=10V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 5.5 nC typical
Power Dissipation 20 W @ TC=25°C
Temperatura de funcionamiento -55°C to +150°C
Paquete DPAK / TO-252-3

Características

  • 400V N-ch MOSFET with 5.0 Ohm RDS(on) and 5.5nC gate charge in DPAK

Aplicaciones

  • Low-power offline SMPS and adapter primary switch

The FQD2N40TM from onsemi is a 400V N-channel enhancement-mode MOSFET designed for low-power offline switching and adapter applications. The 400V breakdown voltage provides adequate margin for 230VAC offline operation with sufficient derating. The 5.0 Ohm maximum on-resistance at VGS=10V and 0.9A continuous drain current are suitable for primary-side switching in SMPS designs up to approximately 20W. The 5.5nC total gate charge enables efficient switching at 50-200kHz frequencies with minimal gate drive loss. The DPAK (TO-252) surface-mount package provides 20W power dissipation capability with the drain tab for efficient heatsinking. The TM suffix denotes tape and reel packaging.

The FQD2N40TM operates as an N-channel enhancement-mode vertical DMOS power MOSFET. (1) 400V Breakdown: The device uses a thick, lightly-doped drift region to support 400V drain-source voltage in the off state. This drift region is the primary contributor to the 5.0 Ohm on-resistance. (2) Enhancement Mode: The device is normally off. When VGS exceeds the 2.0-4.0V threshold, the inversion channel forms and current flows from drain to source. The body diode provides a freewheeling path for inductive loads. (3) Switching: The 5.5nC gate charge determines the energy required to switch the MOSFET. At 100kHz switching frequency, the gate drive loss is Pgate = Qg x VGS x f = 5.5nC x 10V x 100kHz = 5.5mW, which is negligible. The switching losses are dominated by the crossover time during turn-on and turn-off transitions.

Pin Nombre Función
1 G Puerta
2 D Drain (connected to tab)
3 S Fuente
Pestaña D Drain (thermal/electrical)
  • Low-power offline SMPS and adapter primary switch at 400V
Fabricante Número de pieza Paquete Notas
onsemi FQD4N25TM DPAK 250V, 1.8A, lower voltage
Infineon IPD50R3K0P7S DPAK 500V, SuperJunction
ST STD2NK40ZT4 DPAK 400V, 1.2A
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