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BAT760-7

30V, 1A rectificador de barrera Schottky, 320 mV VF a 10 mA, SOD-323, recuperación rápida

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Pieza del fabricante：

BAT760-7

Paquete：

SOD-323 (1,7 x 1,3 mm)

Descripción

The BAT760-7 is a surface-mount Schottky barrier rectifier from Diodes Incorporated with 30 V reverse voltage, 1 A average rectified current, and low forward voltage drop of 245 mV typical at 10 mA and 495 mV maximum at 1 A. It features 25 pF junction capacitance, 3.0 μA typical reverse leakage at 5 V, 5.5 A surge current rating, and fast recovery (≤500 ns). Packaged in SOD-323 (1.7 x 1.3 x 1.05 mm), it operates from -65°C to +150°C with 235 mW power dissipation. Ideal for DC-DC converter rectification, power OR-ing, and battery-powered applications.

Introducción del producto:BAT760-7 Presentación del producto

The BAT760-7 is a surface-mount Schottky barrier rectifier manufactured by Diodes Incorporated, featuring a peak repetitive reverse voltage of 30 V and an average rectified output current of 1 A. The Schottky barrier construction provides a low forward voltage drop of 245 mV typical at IF = 10 mA, 320 mV at IF = 100 mA, and 495 mV maximum at IF = 1 A, minimizing conduction losses in power management circuits.

The device exhibits low reverse leakage current of 3.0 μA typical at VR = 5 V and 50 μA maximum at VR = 15 V, with a total junction capacitance of 25 pF typical at 1 MHz and VR = 5 V. The non-repetitive peak forward surge current is rated at 5.5 A (8.3 ms single half sine-wave), providing robust transient handling capability.

Packaged in SOD-323 (SC-76) with dimensions of 1.7 x 1.3 x 1.05 mm, the BAT760-7 is suitable for space-constrained applications. It has a power dissipation rating of 235 mW on FR-5 board, thermal resistance of 426°C/W (junction-to-ambient), and operates over a junction temperature range of -65°C to +150°C. The device is Pb-free with MSL-1 rating and supplied in tape and reel packaging (3000 units per reel).

Principio de funcionamiento:BAT760-7 Principio de funcionamiento

The BAT760-7 operates as a Schottky barrier rectifier, utilizing a metal-semiconductor (Schottky) junction rather than a conventional P-N junction.

Forward Conduction: When a forward bias voltage exceeding the barrier potential is applied (anode positive relative to cathode), majority carriers (electrons) cross the metal-semiconductor junction with minimal energy loss. The Schottky barrier height is inherently lower than a P-N junction turn-on voltage, resulting in the characteristically low forward voltage drop (245 mV typ at 10 mA). This low VF translates directly to lower power dissipation (P = VF × IF) compared to silicon P-N diodes, improving power conversion efficiency.

Reverse Blocking: Under reverse bias (cathode positive relative to anode), the Schottky junction blocks current flow. However, the metal-semiconductor junction has a lower breakdown voltage than a P-N junction of equivalent construction. The BAT760-7 is rated for 30 V reverse blocking, with a breakdown voltage guaranteed at 30 V minimum (IR = 500 μA). Reverse leakage current increases with temperature, which is a characteristic trade-off of Schottky construction.

Fast Switching: Because Schottky diodes are majority-carrier devices, there is no reverse recovery charge (Qrr) associated with minority carrier recombination. The switching speed is limited only by the junction capacitance (25 pF typ), enabling fast commutation without the reverse recovery current spike seen in P-N diodes. This makes the BAT760-7 ideal for high-frequency switching applications.

Surge Handling: During transient forward surge events (e.g., inrush current, hot-plug), the device can handle up to 5.5 A peak (8.3 ms single half sine-wave) without damage. The thermal mass of the junction absorbs the pulse energy, and the device returns to normal operation after the transient subsides, provided the junction temperature remains within rated limits.

Descripción de la clavija:BAT760-7 Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función por defecto	Descripción
1	Ánodo	P	Positive Terminal	Forward current enters the diode through this terminal
2	Cátodo	G/O	Negative Terminal	Forward current exits; reverse voltage applied to this terminal for blocking mode

Application Scenarios:In which products and applications isBAT760-7 usado

Aplicación	Descripción
DC-DC Converter Output Rectification	Free-wheeling or output rectifier diode in buck, boost, and buck-boost converter topologies where low VF reduces conduction losses and improves efficiency
Power Supply OR-ing	Reverse-current protection in redundant power supply architectures; low VF minimizes voltage drop in the power path
Battery-Powered Devices	Reverse polarity protection and power path switching in portable equipment; low VF extends battery life by minimizing wasted power
Solar Cell Bypass	Bypass diode in photovoltaic cell strings to prevent hot-spot damage when individual cells are shaded
Signal Clamping	Low-forward-drop clamping diode for signal conditioning and protection circuits where conventional P-N diodes introduce excessive voltage drop

Alternative Models:What chips are recommended as replacements for BAT760-7

Modelo	Fabricante	Compatibilidad	Diferencia clave
BAT760	Diodos Incorporados	Pin compatible	Base part number without -7 suffix; same electrical specs; -7 suffix denotes tape and reel packaging
BAT54S	NXP / Various	Funcionalmente similares	30V, 200 mA Schottky, SOT-23; lower current rating in different package
RB521S30T1G	onsemi	Funcionalmente similares	30V, 500 mA Schottky, SOD-523; lower current, smaller package footprint
SS14	Various	Funcionalmente similares	40V, 1A Schottky, SMA; higher voltage rating, larger package, higher VF typ (~0.5V)
MBR0530	onsemi	Funcionalmente similares	30V, 500 mA Schottky, SOD-123; lower current, larger SOD-123 package