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The 2N7002-7-F from onsemi is a 60V N-channel enhancement-mode MOSFET in a SOT-23 surface-mount package. With 115mA continuous drain current, 13.5Ohm on-resistance, and 200mW power dissipation, it is the industry-standard small-signal MOSFET for low-power switching and logic-level interface applications.
Especificaciones
| VDS | 60 V |
| ID (Continuous) | 115 mA |
| RDS(on) Max | 13.5 Ohm @ VGS=5V, ID=50mA |
| VGS(th) | 1.0V to 2.5V |
| VGS Max | +/-20V |
| Power Dissipation | 200 mW |
| Input Capacitance (Ciss) | 30 pF (typical) |
| Turn-On Delay | 10 ns (typical) |
| Turn-Off Delay | 10 ns (typical) |
| Temperatura de funcionamiento | -55 to +150 C (TJ) |
| Paquete | SOT-23-3 |
Características
- 60V N-channel small-signal MOSFET
- 115mA continuous drain current
- Low threshold voltage: 1.0V minimum
- 200mW power dissipation
- 30pF low input capacitance for fast switching
- Industry-standard SOT-23 footprint
- Logic-level gate drive compatible
- Low-power load switching
- Logic-level translation
- LED driving and relay control
- Analog signal gating
- LED on/off switch with 115mA current capability and 3.3V logic-level gate drive
- Relay coil driver with 60V voltage rating providing margin for inductive kickback
- Logic-level voltage translation between 3.3V and 5V domains using open-drain configuration
- Analog signal gating with 13.5Ohm on-resistance and 30pF low capacitance for minimal signal distortion
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- Connector / Aviation Connector Packaging: Hard outer packaging is adopted to prevent pin bending and structural deformation.
Aplicaciones
The 2N7002-7-F from onsemi is the industry-standard 60V N-channel enhancement-mode small-signal MOSFET in a SOT-23-3 surface-mount package. The -7-F suffix denotes the onsemi part numbering with tape and reel packaging. With 115mA continuous drain current and 13.5Ohm maximum on-resistance at VGS=5V, it is one of the most widely used small-signal MOSFETs for low-power switching applications. The low threshold voltage (1.0V minimum) makes it compatible with 3.3V and 5V logic-level gate drive. The 30pF typical input capacitance and 10ns switching delays enable fast turn-on/turn-off for PWM and switching applications. At under $0.02 in volume, it is the go-to choice for simple MOSFET switching in virtually every electronic product.
The 2N7002 operates as a voltage-controlled N-channel enhancement-mode MOSFET. (1) Enhancement-Mode Operation: With no gate-source voltage applied, the device is in the off-state. When VGS exceeds the threshold voltage (1.0V to 2.5V), a conductive channel forms between drain and source. At VGS=5V (typical logic high), the on-resistance drops to 13.5Ohm maximum, allowing 115mA drain current with moderate voltage drop. (2) Vertical DMOS Structure: The small-signal MOSFET uses a lateral DMOS structure optimized for low gate charge (3nC typical) and fast switching. The 60V drain-source voltage rating provides ample margin for 5V, 12V, and 24V switching applications. (3) Body Diode: An intrinsic PN junction body diode exists from source to drain. In most switching applications, the body diode is not relevant since the MOSFET is used for unidirectional switching. The reverse recovery time is not characterized for this small-signal device. (4) Gate Drive: The low input capacitance (30pF) allows direct drive from 3.3V or 5V logic outputs. No gate resistor is typically needed for low-frequency switching, though a 100-ohm resistor can be added for EMI control in high-frequency applications.
| Pin | Nombre | Tipo | Descripción |
|---|---|---|---|
| 1 | Puerta | Entrada | Gate drive input (VGS max +/-20V) |
| 2 | Fuente | Potencia | Source terminal |
| 3 | Drenaje | Potencia | Drain terminal |
| Modelo | Fabricante | VDS | ID | Notas |
|---|---|---|---|---|
| 2N7002W-7-F | Diodos Inc | 60V | 115mA | SOT-323, smaller |
| DMN2075U-7 | Diodos Inc | 20V | 750mA | Lower RDS(on) |
| BSS138-7-F | onsemi | 50V | 220mA | Lower threshold |
| AO3400A | Alpha & Omega | 30V | 5.8A | Much higher current, SOT-23 |
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