EE-SY199

The EE-SY199 is an ultra-compact reflective photomicrosensor manufactured by Omron Electronics (EMC Division). It integrates an infrared emitting diode (IRED) with a peak emission wavelength of 950 nm and a phototransistor detector with a peak spectral sensitivity of 930 nm into a single surface-mount package. The standard sensing distance is 1 mm, making it suitable for presence and position detection in tight spaces.

The emitter side has a maximum forward current of 50 mA with a typical forward voltage of 1.2 V (max 1.4 V at IF = 20 mA) and a maximum reverse voltage of 6 V. The detector side features a collector-emitter breakdown voltage of 35 V (VCEO), emitter-collector voltage of 6 V (VECO), maximum collector current of 20 mA, and collector dissipation of 75 mW. Total allowable loss is 100 mW.

Under standard test conditions (IF = 4 mA, VCE = 2 V, aluminum-deposited surface at d = 1 mm), the light current ranges from 40 uA (min) to 130 uA (max) with 85 uA typical. Dark current is typically 1 nA (max 100 nA at VCE = 20 V, 0 lx), and leakage current in the no-reflection state is max 500 nA. Response time is typically 20 us for both rise and fall times (max 100 us) at VCC = 2 V, RL = 1 kOhm.

The device is housed in a 1206 (3216 Metric) package measuring 3.2 x 1.7 x 1.1 mm with a Polyphenylene Sulfide (PPS) housing. It supports surface-mount reflow soldering with a peak temperature of 260 C. Operating temperature range is -25 to +85 C, storage temperature is -40 to +100 C. The product is RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. The product status is Active (In Production). Two variant models are available: EE-SY199-1 (100 pcs/box for small lots) and EE-SY199-RANKB (sorted by photocurrent).

The EE-SY199 operates as a reflective optical sensor combining an infrared emitter and a phototransistor detector in a single package:

1. Infrared Emission: The emitter side contains an IRED (Infrared Emitting Diode) that emits near-infrared radiation at a peak wavelength of 950 nm when forward-biased through the Anode (A) and Cathode (K) pins. The typical forward voltage is 1.2 V at IF = 20 mA. The emitted IR beam is directed outward from the package surface toward the target detection area.

2. Reflective Detection: When an object is present within the sensing range (standard distance = 1 mm), the emitted IR light reflects off the object surface back toward the phototransistor detector inside the same package. The amount of reflected light depends on the reflectivity of the target surface, the distance to the target, and the emitter drive current.

3. Phototransistor Output: The detector side is a phototransistor with peak spectral sensitivity at 930 nm, closely matching the emitter wavelength for optimal coupling. Reflected IR light generates a base current in the phototransistor, which is amplified to produce a collector current (light current, IL). With IF = 4 mA and VCE = 2 V at d = 1 mm from an aluminum-deposited reference surface, the typical light current is 85 uA (range: 40-130 uA).

4. Signal Conditioning: The collector current flows through an external load resistor (RL), producing a voltage drop that can be read by a comparator or ADC to determine object presence/absence. With RL = 1 kOhm and VCC = 2 V, the rise and fall times are typically 20 us, enabling relatively high-speed detection.

5. Dark State: When no reflective object is present, only a very small dark current (typically 1 nA, max 100 nA) flows through the phototransistor, providing a high contrast ratio between the detected and undetected states.

6. Physical Integration: The emitter and detector are arranged side-by-side within the package with an internal light shield to prevent direct optical crosstalk. The center-to-center offset between the emitter and receiver elements, combined with the reflective geometry, defines the optimal sensing distance of 1 mm.