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BS250P

P-ch DMOS FET, 45V, 230mA, 14Ω, E-Line/TO-92

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جزء الشركة المصنعة ： جزء الشركة المصنعة

BS250P

الحزمة ： الحزمة

E-Line / TO-92-3 / TO-226-3 (5.2×4.2 mm, through-hole, 2.54mm pitch)

الوصف

نظرة عامة على المنتج

The BS250P from Diodes Incorporated is a P-Channel enhancement mode vertical DMOS FET rated at 45V/230mA with 14 Ω on-resistance in a through-hole E-Line (TO-92 compatible) package. With 60 pF input capacitance, 20 ns switching time, and 700 mW power dissipation, it is a classic small-signal P-channel MOSFET for low-power switching and analog signal routing.

المواصفات الرئيسية

نوع القناة	P-channel enhancement mode (vertical DMOS)
VDS (max)	-45V
ID (max)	-230 mA @ TA=25°C
RDS(on) @ VGS=-10V	14 Ω max
VGS(th)	-3.5V max @ ID=-1mA
VGS (max)	±20V
CISS	60 pF typical @ VDS=-10V
Forward Transconductance	150 mS typical @ VDS=-10V
Turn-On/Off Time	20 ns max
IDSS (zero gate voltage)	-500 nA max @ VDS=-25V
Ptot	700 mW @ TA=25°C
درجة حرارة التشغيل	-55°C to +150°C (junction)
الحزمة	E-Line / TO-92 compatible (through-hole)

الميزات

Classic P-channel vertical DMOS technology
45V drain-source voltage rating
Low input capacitance: 60 pF for minimal loading
Fast switching: 20 ns turn-on/off time
Through-hole E-Line package (TO-92 compatible)
Low zero-gate-voltage drain current: 500 nA max
درجة حرارة تشغيل واسعة: -55 درجة مئوية إلى +150 درجة مئوية

التطبيقات

Low-power load switching and analog signal routing
Level shifting and voltage translation
High-side P-channel switching in battery circuits
General-purpose small-signal MOSFET switching

مقدمة المنتج:BS250P مقدمة المنتج

The BS250P from Diodes Incorporated is a P-Channel enhancement mode vertical DMOS FET rated at 45V/230mA with 14 Ω RDS(on) in a through-hole E-Line (TO-92) package. With 60 pF input capacitance, 20 ns switching, and 700 mW dissipation, it is a classic small-signal P-channel MOSFET for low-power switching, level shifting, and analog signal routing.

مبدأ العمل:BS250P مبدأ العمل

The BS250P uses a vertical DMOS (Double-diffused MOS) structure optimized for P-channel small-signal switching. The vertical structure places the drain at the bottom of the die, connected to the package tab, while the source and gate are on top. When the gate-source voltage exceeds the threshold (VGS(th) ≈ -2 to -3.5V), an inversion layer forms in the P-body region, creating a conduction channel from source to drain. The 14 Ω RDS(on) is suitable for low-current switching applications where bipolar transistors would require significant base drive current. The 60 pF input capacitance and 20 ns switching time make it responsive for medium-speed signal routing. As a P-channel device, it can be used for high-side switching by pulling the gate below the source voltage.

وصف الدبوس:BS250P تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	المصدر	الطاقة	Source terminal
2	البوابة	المدخلات	Gate terminal (voltage control)
3	الصرف	المخرجات	Drain terminal (output)

Application Scenarios:In which products and applications isBS250P مستعمل

Low-power P-channel load switching and high-side control
Level shifting and voltage translation between logic levels
Analog signal routing and multiplexing
Battery-powered circuit high-side switching

Alternative Models:What chips are recommended as replacements for BS250P

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
الثنائيات	BS250FTA	SOT-23	SMD version, lower current (90mA)
فيشاي	BS250P	TO-92	Equivalent from Vishay
إنفينيون	BS250P	SOT-223	Equivalent, SOT-223 package
الثنائيات	BS250	TO-92	60V version
نيكسبيريا	PMV160UP	SOT-23	Modern SMD P-ch alternative, 60V