产品概览
The STF26NM60N from STMicroelectronics is an N-channel 600V MDmesh II power MOSFET with 135 mΩ typical on-resistance and 20A drain current in a TO-220FP package. Using second-generation MDmesh strip-layout technology, it delivers low gate charge and excellent avalanche capability for high-efficiency switching power converters.
主要规格
- Channel Type: N-Channel
- VDS: 600V
- VGS: ±30V
- ID: 20A (TC=25°C), 12.6A (TC=100°C)
- IDM: 80A (pulsed)
- RDS(on): 135 mΩ typ, 165 mΩ max @ VGS=10V, ID=10A
- VGS(th): 2V ~ 4V (ID=250µA)
- Qg: 60 nC typ @ VDD=480V, ID=20A, VGS=10V
- Qgd: 30 nC typ
- Ciss: 1800 pF
- Coss: 115 pF
- Crss: 1.1 pF
- EAS: 610 mJ (single pulse avalanche)
- PTOT: 35W (TC=25°C)
- Rth(j-c): 3.6°C/W
- VISO: 2500V RMS (insulated package)
- Operating Temperature: -55°C ~ 150°C
- Package: TO-220FP (insulated)
特点
- MDmesh II second-generation strip-layout technology
- 100% avalanche tested for robustness
- Low gate charge for efficient high-frequency switching
- Low input capacitance and Crss for fast transitions
- Insulated TO-220FP package (2500V RMS isolation)
- Internal gate resistance of 2.8 Ω for EMI control
应用
- Switch-mode power supplies (SMPS)
- Power factor correction (PFC) stages
- Motor drive inverters
- Lighting ballasts
- Induction heating