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IRF9Z34NPBF


-55V -19A P-Channel MOSFET, 140mOhm max, TO-220AB, HEXFET

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制造商零件:

IRF9Z34NPBF

包装:

TO-220AB (15.6 x 10.4 x 4.6 mm, through-hole)

品牌:
产品类别:
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说明

产品概览

The IRF9Z34NPBF from Infineon (formerly International Rectifier) is a -55V P-Channel HEXFET power MOSFET in a TO-220AB package. With 140mOhm max on-resistance and -19A continuous drain current, it is designed for load switching and DC-DC converter applications requiring P-channel drive simplicity.

主要规格

Channel Type P-Channel
Drain-Source Voltage (VDSS) -55 V
Continuous Drain Current -19 A (Tc=25C)
On-Resistance (RDS(on)) 100 mOhm typ, 140 mOhm max @ VGS=-10V
Gate Charge (Qg) 38 nC (typ)
功率耗散 68 W (Tc=25C)
RthJC 1.84 C/W
工作温度 -55 to +175 C
包装 TO-220AB (3-pin, through-hole)

特点

  • -55V P-Channel HEXFET power MOSFET
  • 100mOhm typical on-resistance at VGS=-10V
  • -19A continuous drain current
  • 38nC typical gate charge
  • Simplified high-side switching (no gate driver needed)
  • 175C max junction temperature
  • Lead-free PBF termination

应用

  • High-side load switching
  • 直流-直流转换器
  • Motor drive bridge circuits
  • Battery disconnect switches
  • Power management circuits

The IRF9Z34NPBF from Infineon is a -55V P-Channel HEXFET power MOSFET in a TO-220AB through-hole package. With 100mOhm typical on-resistance at VGS=-10V and -19A continuous drain current, it provides simplified high-side switching without requiring bootstrap gate drive circuits. The PBF suffix indicates lead-free termination. P-Channel MOSFETs like the IRF9Z34N are particularly advantageous for high-side load switching because the gate can be driven directly from logic-level signals referenced to the positive supply rail.

The IRF9Z34N operates as a P-Channel enhancement-mode HEXFET: (1) P-Channel Conduction: When the gate voltage is pulled below the source voltage by more than the threshold (2-4V), an inversion layer forms in the P-body creating a conductive channel. At VGS=-10V, RDS(on) is 100mOhm typical. (2) High-Side Switching: P-Channel MOSFETs simplify high-side switching because the source connects to the positive supply. Pulling the gate to ground turns on the switch, while pulling the gate to the source turns it off. No bootstrap or charge pump is needed. (3) Body Diode: An intrinsic body diode conducts from source to drain, useful in bridge and motor drive applications as a freewheeling diode. (4) Gate Charge: The 38nC gate charge provides a reasonable balance between switching speed and drive requirements.

针脚 名称 类型 说明
1 大门 输入 Gate terminal
2 排水 电源 Drain terminal (tab)
3 资料来源 电源 Source terminal
  • High-side load switch in 12V/24V automotive systems with direct gate drive
  • DC-DC converter P-Channel switch for synchronous buck topology
  • Battery disconnect switch with P-Channel for simplified control
  • H-bridge motor drive P-Channel high-side element with 140mOhm conduction loss
模型 制造商 VDSS 身份证 RDS(on) 说明
IRF9Z34NPBFXKMA1 英飞凌 -55V -19A 140mOhm Recommended replacement
FQP47P06 onsemi -60V -47A 26mOhm Lower RDS(on)
IRFR9310TRPBF 英飞凌 -400V -2.3A 3.6Ohm Higher voltage
NDP6020P onsemi -20V -22A 20mOhm Logic-level, lower voltage
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