零件编号：2N7002K-T1-GE3制造商：VishayDevice Type：N 沟道增强模式 MOSFET 封装：SOT-23
电气特性
以下是更正后的文本，其中的拼写和语法错误已得到纠正：
漏极-源极电压 (V_DSS)： 60 V
连续漏极电流 (I_D)： 280 毫安
栅极-源极阈值电压 (V_GS(th))： 1.0 ~ 2.5 V
导通电阻 (R_DS(on))： 低导通电阻，实现低损耗开关
工作温度范围： -55°C ~ +150°C
部件编号定义
2N7002KN 沟道小信号 MOSFET
T1：SOT-23 封装形式
GE3：用于 SMT 批量生产的卷带包装
主要功能
小型 SOT-23 表面贴装封装
栅极驱动电压低，便于 MCU 逻辑电平驱动
低导通电阻，低功耗
切换速度快
高输入阻抗
工业级温度范围，高稳定性和可靠性
典型应用
信号切换和负载驱动
电池管理和供电电路
便携式消费电子产品
工业控制电路
模拟开关、电平转换电路
The 2N7002K-T1-GE3 is an N-channel enhancement-mode TrenchFET power MOSFET from Vishay in SOT-23-3 (TO-236) package, featuring 60V drain-source voltage, 300mA continuous drain current, 2Ω max RDS(on) at 10V VGS, 1V threshold voltage, 350mW power dissipation, and 25ns turn-on delay. Halogen-free, ESD protection >2000V HBM. Supplied on 3,000-piece tape and reel.
工作原理（200 字以内）
| 针脚编号 | 引脚名称 | 说明 |
|---|---|---|
| 1 | G | Gate; voltage on this terminal controls drain-source conduction |
| 2 | S | Source; current flows from drain to source when channel is enhanced |
| 3 | D | Drain; current enters the device through this terminal |
| 应用 | 说明 |
|---|---|
| 低侧负载开关 | Switching resistive loads such as LEDs, relays and solenoids up to 300mA |
| Logic Level Conversion | Interface between 3.3V logic and 5V or higher voltage circuits |
| Motor Driver Auxiliary | Small DC motor and fan control with PWM up to moderate frequencies |
| 电池供电设备 | Power gating and load disconnect with low gate charge (0.6nC) for minimal drive loss |
| LED Lighting | Switching individual LED strings or segments in lighting controllers |
| Industrial Signal Switching | General-purpose switching in sensor and control circuits with 60V breakdown rating |
| 模型 | 制造商 | 包装 | 主要区别 |
|---|---|---|---|
| 2N7002ET1G | onsemi | SOT-23-3 | Similar 60V/300mA, different RDS(on) profile |
| BSS138-7-F | Diodes Inc. | SOT-23-3 | 50V/220mA, lower threshold (1.3V), popular for level shifting |
| 2N7002K-T1-E3 | Vishay | SOT-23-3 | Same die, non-ESD enhanced package marking |
| NTR4003NT1G | onsemi | SOT-23-3 | 30V/500mA, lower RDS(on) (1.5Ω), higher current capability |
| SI2302DS-T1-GE3 | Vishay | SOT-23-3 | 20V/2.2A, much higher current, TrenchFET for power switching |
货运周期：3~7 天
最低订购量为 1
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