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2N7002K-T1-GE3


N 沟道增强型 TrenchFET 功率 MOSFET,采用 SOT-23-3 封装,额定电压为 60V/300mA,RDS(导通)为 2Ω。.

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制造商零件:

2N7002K-T1-GE3

包装:

SOT-23

品牌:
产品类别:
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说明

零件编号:2N7002K-T1-GE3制造商:VishayDevice Type:N 沟道增强模式 MOSFET 封装:SOT-23
电气特性

以下是更正后的文本,其中的拼写和语法错误已得到纠正:

漏极-源极电压 (V_DSS): 60 V
连续漏极电流 (I_D): 280 毫安
栅极-源极阈值电压 (V_GS(th)): 1.0 ~ 2.5 V
导通电阻 (R_DS(on)): 低导通电阻,实现低损耗开关
工作温度范围: -55°C ~ +150°C

部件编号定义

2N7002KN 沟道小信号 MOSFET
T1:SOT-23 封装形式
GE3:用于 SMT 批量生产的卷带包装

主要功能

小型 SOT-23 表面贴装封装
栅极驱动电压低,便于 MCU 逻辑电平驱动
低导通电阻,低功耗
切换速度快
高输入阻抗
工业级温度范围,高稳定性和可靠性

典型应用

信号切换和负载驱动
电池管理和供电电路
便携式消费电子产品
工业控制电路
模拟开关、电平转换电路

The 2N7002K-T1-GE3 is an N-channel enhancement-mode TrenchFET power MOSFET from Vishay in SOT-23-3 (TO-236) package, featuring 60V drain-source voltage, 300mA continuous drain current, 2Ω max RDS(on) at 10V VGS, 1V threshold voltage, 350mW power dissipation, and 25ns turn-on delay. Halogen-free, ESD protection >2000V HBM. Supplied on 3,000-piece tape and reel.

工作原理(200 字以内)

针脚编号 引脚名称 说明
1 G Gate; voltage on this terminal controls drain-source conduction
2 S Source; current flows from drain to source when channel is enhanced
3 D Drain; current enters the device through this terminal
应用 说明
低侧负载开关 Switching resistive loads such as LEDs, relays and solenoids up to 300mA
Logic Level Conversion Interface between 3.3V logic and 5V or higher voltage circuits
Motor Driver Auxiliary Small DC motor and fan control with PWM up to moderate frequencies
电池供电设备 Power gating and load disconnect with low gate charge (0.6nC) for minimal drive loss
LED Lighting Switching individual LED strings or segments in lighting controllers
Industrial Signal Switching General-purpose switching in sensor and control circuits with 60V breakdown rating
模型 制造商 包装 主要区别
2N7002ET1G onsemi SOT-23-3 Similar 60V/300mA, different RDS(on) profile
BSS138-7-F Diodes Inc. SOT-23-3 50V/220mA, lower threshold (1.3V), popular for level shifting
2N7002K-T1-E3 Vishay SOT-23-3 Same die, non-ESD enhanced package marking
NTR4003NT1G onsemi SOT-23-3 30V/500mA, lower RDS(on) (1.5Ω), higher current capability
SI2302DS-T1-GE3 Vishay SOT-23-3 20V/2.2A, much higher current, TrenchFET for power switching
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雪崩超快恢复整流二极管,采用 DO-220AA (SMP) 封装,专为汽车和高温应用而设计。.

品牌:

封装:

DO-220AA
有库存:
6569 件

货运周期:3~7 天
最低订购量为 1

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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