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XC6206P332MR

3.3V 200mA CMOS LDO, 1uA Iq, 200mV dropout, SOT-23-3, ultra-low power

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Manufacturer Part：

XC6206P332MR

Package：

SOT-23-3 (2.9 x 1.6 x 1.1mm)

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Description

Product Overview

The XC6206P332MR from Torex Semiconductor is a 3.3V fixed-output CMOS LDO voltage regulator with ultra-low quiescent current of 1uA and 200mA output capability. Available in an ultra-compact SOT-23-3 package, it is ideal for battery-powered applications requiring minimal power consumption.

Key Specifications

Output Voltage 3.3V (fixed, +/-2%)
Output Current 200 mA (max)
Input Voltage Range 2.0V to 6.0V
Dropout Voltage 200 mV (typ at 100mA)
Quiescent Current 1.0 uA (typ)
Output Voltage Accuracy +/-2%
PSRR 65 dB at 1kHz
Operating Temperature -40 to 85 C
Package SOT-23-3

Features

  • Ultra-low 1uA quiescent current
  • 200mA output with 200mV dropout
  • +/-2% output voltage accuracy
  • Short-circuit protection
  • Compact SOT-23-3 package

Applications

  • Battery-powered MCU and sensor supplies
  • Wearable and portable devices
  • IoT wireless module power
  • RTC and backup power rails
  • Low-power MCU regulation

The XC6206P332MR from Torex Semiconductor is a high-precision, ultra-low-power CMOS LDO voltage regulator providing a fixed 3.3V output at up to 200mA. With a quiescent current of only 1uA and dropout voltage of 200mV at 100mA, it dramatically extends battery life in always-on applications. The +/-2% output voltage accuracy and 65dB PSRR at 1kHz ensure stable, clean power for sensitive analog and digital circuits. The tiny SOT-23-3 package makes it ideal for space-constrained portable and wearable designs.

The XC6206P332MR operates as a CMOS linear voltage regulator optimized for ultra-low quiescent current. **Reference Subsystem**: A precision bandgap reference sets the 3.3V output with +/-2% accuracy over temperature and line/load variations. **Error Amplifier**: A CMOS differential amplifier compares the output voltage against the internal reference. The ultra-low 1uA quiescent current is achieved by biasing the error amplifier and reference at microampere levels. **Pass Element**: A P-channel MOSFET serves as the pass element, enabling low dropout voltage (200mV at 100mA) since the gate can be driven to ground. This contrasts with NPN-based LDOs that require VBE + headroom. **Protection**: Internal short-circuit current limiting protects the device during output fault conditions. The output stage is designed to be stable with a small 1uF ceramic output capacitor.

Pin Name Description
1 VSS (GND) Ground
2 VOUT Regulated 3.3V output
3 VIN Input supply voltage (2.0V to 6.0V)
  • IoT Sensors: 3.3V rail for low-power wireless sensor nodes with months of battery life
  • Wearable Devices: Regulating Li-ion battery to 3.3V for MCU and BLE module with 1uA standby
  • RTC Backup: Maintaining real-time clock power with minimal battery drain during system sleep
  • MCU Power: 3.3V supply for ARM Cortex-M0+ microcontrollers in always-on sensing applications
  • Portable Instruments: Handheld measurement tools requiring long battery life and clean power
Model Manufacturer Key Difference
HT7133-1 Holtek 3.3V, 250mA, 2.5uA Iq, SOT-89
ME6211A33M3G Microne 3.3V, 300mA, 2.5uA Iq, SOT-23-3
RT9193-33GB Richtek 3.3V, 300mA, 280mV dropout, SOT-23-5
AP2112K-3.3 Diodes Inc 3.3V, 600mA, 250mV dropout, SOT-23-5
TLV70033DDCR TI 3.3V, 200mA, 50uA Iq, SOT-23-5
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