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TPD4S012DRYR


4-ch TVS ESD protection diode array, 0.8pF, 5.5V, +/-10kV contact, 15V VBUS tolerant, USON-6 for USB HS/OTG/Charger

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Manufacturer Part:

TPD4S012DRYR

Package:

USON-6 (DRY), 1.45 x 1.00 x 0.6 mm

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Description

Product Overview

The TPD4S012DRYR is a four-channel Transient Voltage Suppressor (TVS) based ESD protection diode array manufactured by Texas Instruments, purpose-built for USB High-Speed, USB On-The-Go (OTG), and USB Charger interfaces. Encapsulated in a space-saving USON-6 (DRY) package measuring only 1.45 x 1.00 x 0.6 mm, it delivers IEC 61000-4-2 Level 4 ESD protection with ±10-kV contact discharge immunity on all protected lines. The device distinguishes itself with a 15-V tolerant VBUS clamp and ultra-low 0.8-pF line capacitance on the D+, D-, and ID signal pins, ensuring full USB 2.0 High-Speed compliance at data rates beyond 480 Mbps without degrading signal integrity. Its flow-through pin mapping allows placement directly adjacent to the USB connector with zero additional skew.

Key Specifications

Number of Channels 4 (D+, D-, ID, VBUS)
Directionality Uni-Directional
VRWM – Working Voltage (D+/D-/ID) 5.5 V
VRWM – Working Voltage (VBUS) 15 V
IO Capacitance (D+/D-/ID, typ) 0.8 pF
VBUS Capacitance (typ) 11 pF
Breakdown Voltage min (D+/D-/ID) 6 V
Breakdown Voltage min (VBUS) 20 V
Clamping Voltage (typ) 8 V
Dynamic Resistance (typ) 1 ohm
IO Leakage Current (max) 500 nA
IEC 61000-4-2 Contact Discharge ±10 kV
IEC 61000-4-5 Surge Current (8/20 us) 3 A
Peak Pulse Power (8/20 us) 60 W
VBUS Absolute Max Voltage 20 V
Package USON-6 (DRY), 1.45 x 1.00 x 0.6 mm
Operating Temperature Range -40 to +85 deg C
Lead Finish NiPdAu
MSL Rating Level-1-260C-UNLIM
Rohs / REACH Compliant

Features

  • Integrated ESD clamps on D+, D-, ID, and VBUS pins for single-chip USB interface protection
  • Ultra-low 0.8-pF line capacitance on signal pins preserves USB 2.0 High-Speed signal integrity
  • 15-V tolerant VBUS clamp supports USB charger and OTG applications beyond standard 5-V operation
  • Snap-back technology maintains high standoff voltage during normal operation and reduces clamp voltage during ESD stress
  • IEC 61000-4-2 Level 4 ESD protection: ±10-kV contact discharge on all protected lines
  • IEC 61000-4-5 surge rating: 3-A peak pulse current (8/20 us)
  • Flow-through pin mapping enables zero-additional-skew PCB layout near the USB connector
  • Supports data rates exceeding 480 Mbps, fully compliant with USB 2.0 High-Speed
  • RoHS compliant with NiPdAu lead finish; MSL-1 unlimited floor life

Applications

  • Cellular phones and smartphones with USB charging and data transfer
  • Digital cameras and portable media players
  • GPS navigation devices with USB interface
  • Portable Digital Assistants (PDA) and tablets
  • Laptop and portable computers with USB OTG support
  • USB charger, docking station, and car-kit peripheral interfaces

The TPD4S012DRYR is a four-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array manufactured by Texas Instruments, specifically engineered for USB High-Speed, USB On-The-Go (OTG), and USB Charger interfaces. In modern portable devices, the USB connector serves as the primary interface for high-speed data transfer, audio, charging, and car-kit connectivity. To accommodate these diverse functions, the USB port must tolerate varying voltage levels on different pins. The TPD4S012 resolves this challenge by integrating two distinct clamp architectures within a single chip: ultra-low-capacitance (0.8 pF) steering diodes for the high-speed signal lines (D+, D-, ID) and a higher-voltage tolerant clamp for the VBUS line that withstands up to 15 V continuously. This dual-clamp design leverages Texas Instruments’ proprietary snap-back technology, which maintains a high standoff voltage under normal operating conditions and rapidly transitions to a lower clamp voltage during ESD stress events, providing robust transient protection without compromising signal quality. The device is packaged in a USON-6 (DRY) footprint of only 1.45 x 1.00 x 0.6 mm with flow-through pin mapping, enabling placement directly at the USB connector with minimal parasitic inductance and zero additional signal skew.

The TPD4S012DRYR employs two independent protection subsystems within a single monolithic device:

1. High-Speed Signal Line Protection (D+, D-, ID): Each signal pin is connected to a steering-diode-based ESD clamp with typical capacitance of only 0.8 pF. During normal USB 2.0 High-Speed operation at 480 Mbps, this ultra-low capacitance introduces negligible signal attenuation and preserves the differential impedance matching required by the USB specification. When an ESD transient exceeding the breakdown voltage (6 V min) is applied, the clamp diodes conduct and route the surge current to ground. The snap-back mechanism then reduces the clamp voltage well below the breakdown threshold, offering a low dynamic resistance (1 ohm typical) that limits the voltage seen by the downstream transceiver.

2. VBUS Line Protection: The VBUS pin integrates a separate ESD clamp with higher capacitance (11 pF typical) designed for power-line rather than high-speed signal protection. This clamp tolerates continuous DC voltages up to 15 V, accommodating non-standard charger voltages and USB OTG host-mode supply conditions. Its breakdown voltage is 20 V minimum, and the absolute maximum rating extends to 20 V. During an ESD or surge event on VBUS, the clamp activates and shunts transient energy to ground with the same snap-back behavior and 1-ohm dynamic resistance.

3. Ground Return Path: All ESD clamp circuits share a common GND reference (Pin 4). The flow-through pin arrangement — signal inputs on one side and ground on the opposite side — creates a low-inductance return path that is critical for effective high-frequency ESD suppression. Proper PCB layout with a solid ground plane beneath the device further optimizes clamping performance.

Pin No. Name Type Function
1 D+ ESD Clamp Provides ESD protection for the USB D+ high-speed differential data line. Ultra-low 0.8-pF capacitance preserves signal integrity at USB 2.0 High-Speed rates.
2 D- ESD Clamp Provides ESD protection for the USB D- high-speed differential data line. Functionally identical to the D+ clamp; pins are interchangeable for routing convenience.
3 ID ESD Clamp Provides ESD protection for the USB OTG ID pin. Same clamp characteristics as D+ and D- pins.
4 GND Power Ground reference for all ESD clamp circuits. Must be connected to PCB ground plane for optimal clamping performance.
5 N.C. Not internally connected. This pin may be left floating or tied to ground.
6 VBUS ESD Clamp Provides ESD and surge protection for the VBUS power line. Tolerates continuous DC voltage up to 15 V and provides IEC 61000-4-2 Level 4 protection on this line.
  • Cellular phones and smartphones: Protects USB data and charging ports against ESD events during handling and cable insertion
  • Digital cameras and portable media players: Safeguards USB interface during data transfer and charging from external power adapters
  • GPS navigation devices: Provides ESD protection for USB connectivity in automotive and outdoor environments
  • Portable computers and tablets with USB OTG: Protects dual-role USB ports that alternate between host and device modes
  • USB charger and docking stations: Shields VBUS line from voltage transients in charging and docking applications
Manufacturer Part Number Channels Package Key Notes
Texas Instruments TPD4S012YFPR 4 YFP (DSBGA-6, 1.43 x 0.89 mm) Same functionality, different package option (chip-scale)
Texas Instruments TPD2E001 2 SOT-23-6 Lower channel count for 2-line USB interfaces
Texas Instruments TPD6F002 6 WCSP-12 Higher channel density for multi-port USB or HDMI applications
Nexperia PESD24VS1ULD,315 1 SOD-882D Single-channel TVS alternative, higher breakdown voltage (26.5 V)
Texas Instruments TPD12S016 12 WQFN-24 12-channel ESD for advanced multi-protocol interface protection
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