TL082CDR


Dual JFET-input op-amp, 3MHz GBW, 13V/us, 30pA Ibias, SOIC-8

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Manufacturer Part:

TL082CDR

Package:

SOIC-8 (4.9 x 3.9 x 1.5 mm)

Brand:
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Description

Product Overview

The TL082CDR from Texas Instruments is a dual JFET-input operational amplifier in an 8-pin SOIC package. With 3MHz gain-bandwidth product, 13V/us slew rate, 30pA input bias current, and wide +/-2.25V to +/-20V supply range, it is a general-purpose JFET op-amp for audio, industrial, and instrumentation applications.

Key Specifications

Channels 2 (dual)
Architecture JFET-Input
Gain-Bandwidth Product 3 MHz
Slew Rate 13 V/us
Input Offset Voltage 3 mV (typ), 6 mV (max)
Input Bias Current 30 pA (typ)
Input Offset Current 5 pA (typ)
CMRR 86 dB (typ)
Supply Voltage Range +/-2.25V to +/-20V (4.5V to 40V)
Supply Current 1.4 mA/ch (typ)
Noise Density 18 nV/sqrtHz @ 1kHz
THD 0.003% (typ)
Operating Temperature 0 to +70 C
Package SOIC-8

Features

  • Dual JFET-input operational amplifier
  • 3MHz gain-bandwidth product
  • 13V/us high slew rate
  • 30pA low input bias current
  • High input impedance (10^12 Ohm)
  • +/-2.25V to +/-20V wide supply range
  • Output short-circuit protection
  • 0.003% low total harmonic distortion
  • Pin-compatible with LM1558/LM358
  • Common-mode input includes VCC+

Applications

  • Audio preamplifiers and filters
  • High-impedance sensor interfaces
  • Active filters and integrators
  • Sample-and-hold circuits

The TL082CDR from Texas Instruments is a dual JFET-input operational amplifier in an 8-pin SOIC package. The C suffix indicates commercial temperature range (0 to +70C), D denotes SOIC-8 package, and R indicates tape and reel. Using BI-FET II technology, it combines JFET input transistors (for ultra-low 30pA input bias current and 10^12 Ohm input impedance) with bipolar output stage (for low output impedance and short-circuit protection). The 3MHz gain-bandwidth product and 13V/us slew rate make it suitable for audio and general-purpose applications. Pin-compatible with the industry-standard LM1558, it offers an upgrade path with JFET input performance. The TL082H variant extends the temperature range to -40 to +125C with improved specs.

The TL082CDR operates through three circuit stages per channel: (1) JFET Input Differential Pair: Two matched N-channel JFETs form the input differential pair, providing extremely low input bias current (30pA typical) and high input impedance (10^12 Ohm). The JFET input also enables the common-mode voltage range to include the positive supply rail (VCC+), allowing operation in single-supply applications where the inputs must approach the positive rail. (2) Voltage Gain Stage: A high-gain bipolar stage amplifies the differential signal from the JFET pair. Internal compensation provides unity-gain stability with a 3MHz gain-bandwidth product. (3) Output Stage: A Class AB bipolar output stage provides low output impedance and can drive loads as low as 2kOhm to +/-10V swing at +/-15V supply. Short-circuit protection limits the output current during fault conditions. The output can swing to within 1.5V of the supply rails.

Pin Name Type Description
1 1OUT Output Channel 1 output
2 1IN- Input Channel 1 inverting input
3 1IN+ Input Channel 1 non-inverting input
4 VCC- Power Negative supply (or GND for single-supply)
5 2IN+ Input Channel 2 non-inverting input
6 2IN- Input Channel 2 inverting input
7 2OUT Output Channel 2 output
8 VCC+ Power Positive supply
  • Audio preamplifier with 30pA low input bias current and 0.003% THD for high-fidelity signal path
  • High-impedance pH sensor interface with 10^12 Ohm input impedance and 86dB CMRR
  • Active filter stage with 3MHz GBW and 13V/us slew rate for anti-aliasing or tone control
  • Sample-and-hold circuit with JFET input preventing sample capacitor discharge during hold
Model Manufacturer GBW Ibias Notes
TL082HCDR TI 5.25MHz 20pA Improved version, -40 to +125C
TL072CDR TI 3MHz 30pA Lower noise version
RC4558DR TI 3MHz 40nA Bipolar input, audio standard
OPA2134PA TI 8MHz 100pA FET input, higher performance
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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