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SI4056DY-T1-GE3

N-ch MOSFET, 100V, 23mOhm, 11.1A, SOIC-8

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Manufacturer Part：

SI4056DY-T1-GE3

Package：

SOIC-8 (5.0 x 4.0 x 1.55 mm, 1.27mm pitch)

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Description

Product Overview

The SI4056DY-T1-GE3 from Vishay Siliconix is an N-channel 100V TrenchFET MOSFET with 23 mOhm RDS(ON), 11.1A drain current, and SOIC-8 package.

Key Specifications

Type N-Channel Enhancement Mode TrenchFET MOSFET
VDS 100 V
VGS +/-20 V
ID (continuous) 11.1 A @ TC=25C
RDS(ON) 23 mOhm (max) @ VGS=10V; 32 mOhm (max) @ VGS=4.5V
Gate Charge (Qg) 19.6 nC (typical) @ VGS=10V
Input Capacitance (Ciss) 900 pF (typical) @ VDS=50V
Power Dissipation 2.5 W @ TA=25C
Gate Threshold (VGS(th)) 1.0V to 2.8V
Package SOIC-8 (5.0 x 4.0 x 1.5 mm)
Operating Temperature -55C to +150C (TJ)

Features

  • 100V N-channel TrenchFET technology
  • 23 mOhm max RDS(ON) at VGS=10V
  • 11.1A continuous drain current
  • 19.6 nC typical gate charge
  • SOIC-8 surface mount package
  • T1-GE3 suffix: tape and reel, lead-free

Applications

  • DC-DC converter power stage
  • Motor drive switch
  • Load switch
  • Battery management

The SI4056DY-T1-GE3 from Vishay Siliconix is an N-channel enhancement mode TrenchFET power MOSFET rated at 100V VDS with 23 mOhm maximum RDS(ON) at VGS=10V in an SOIC-8 package. The TrenchFET technology uses a vertical trench-gate structure that minimizes the cell pitch while maximizing channel density, resulting in the low 23 mOhm on-resistance for a 100V device in an SOIC-8 footprint. The 11.1A continuous drain current rating supports medium-power DC-DC converter and motor drive applications. The 19.6 nC typical gate charge at 10V enables efficient switching at frequencies up to 500 kHz with modest gate drive capability. The SOIC-8 package provides a compact footprint with gull-wing leads for reliable surface-mount assembly. The T1-GE3 suffix indicates tape and reel packaging with lead-free (RoHS compliant) terminations. Note: This device is listed as NRND (Not Recommended for New Designs) by Vishay.

The SI4056DY-T1-GE3 uses Vishay’s TrenchFET technology where the gate electrode is formed in a vertical trench etched into the silicon. The trench is lined with gate oxide and filled with polysilicon, creating a vertical channel on both sidewalls of the trench. This structure dramatically increases the channel width per unit area compared to a planar MOSFET, reducing the specific on-resistance (RDS(ON) x area). When VGS exceeds the threshold voltage (1.0-2.8V), an inversion layer forms on the trench sidewalls, creating a conductive channel between the source (top) and drain (bottom). The 23 mOhm RDS(ON) at 10V VGS is achieved through thousands of parallel trench cells that share the drain current. The 100V breakdown voltage is maintained by a lightly-doped drift region between the channel and the drain. The gate charge of 19.6 nC at 10V VGS represents the total charge that must be supplied to the gate to switch the MOSFET from off to on, consisting of Qgs (2.7 nC), Qgd (7.8 nC), and Qg total. The Miller plateau region during Qgd determines the switching transition time and associated losses.

Pin Name Type Function
1 Source Power Source terminal
2 Source Power Source terminal
3 Source Power Source terminal
4 Gate Input Gate terminal
5 Drain Power Drain terminal
6 Drain Power Drain terminal
7 Drain Power Drain terminal
8 Drain Power Drain terminal
  • 48V DC-DC buck converter synchronous rectifier with 23mOhm RDS(ON) and 19.6nC Qg for 200kHz switching
  • 24V motor H-bridge switch with 11.1A continuous rating and 100V breakdown margin
  • Battery disconnect switch for 12V/24V systems with 100V blocking and low RDS(ON)
Manufacturer Part Number Package Notes
Vishay SI4936DY-T1-GE3 SOIC-8 60V, lower RDS(ON), replacement
Infineon IRF7492TRPBF SOIC-8 100V, 22mOhm, direct alt
onsemi NTD5867NL-1G SOIC-8 60V, 17mOhm, alternative
ST STB100NH3L DPAK 100V, 17mOhm, larger package
Vishay SI4483EY-T1-GE3 SOIC-8 30V, 5mOhm, lower voltage
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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